Hussain Amreen A
Facilitation Centre for Industrial Plasma Technologies (FCIPT), Institute for Plasma Research (IPR), Gandhinagar, Gujarat 382428, India.
ACS Appl Mater Interfaces. 2020 Oct 14;12(41):46317-46329. doi: 10.1021/acsami.0c14083. Epub 2020 Oct 1.
Since the discovery of the state-of-the-art hybrid halide perovskites, their application in optoelectronic systems has drawn considerable attention. However, the toxicity from lead (Pb) and the volatility induced by organic constituents hinder their future large-scale market development. Herein, a fully inorganic Pb-free halide perovskite based on robust CsBiI is synthesized and realized its potential in photodetector application. The material property investigation suggests the good crystalline quality with strong absorption coefficient suitable for photodetection. An interesting feature based on the extended absorption is obtained, which is the characteristic of a weak phonon-assisted transition. Additionally, the morphological features display the beautifully grown micrometer-sized crystals of CsBiI. The fabricated photodetector demonstrated the self-powered operation (zero-bias state) with a very low dark current of 0.46 pA. Profiting from this, an improved photosensitivity of 1.4 × 10 is achieved. Moreover, along with self-powered photodetection, the photodetector exhibits a broad spectral response (450-950 nm), high detectivity (1.2 × 10/1.6 × 10 Jones), high responsivity (0.59 μA W/3.8 mA W), and fast response speed (ms) under a weak optical signal of 0.1 mW cm with a larger active area of 0.25 cm. The photodetector shows high photostability which was well retained for almost 2000 repetitive cycles without degradation. More strikingly, based on the core stability of the perovskite film, an excellent long-term stability of 3 months (90 days) is achieved for the photodetector even after exposure to moist air (75% relative humidity). This study thus highlights one of the few Pb-free all-inorganic perovskite photodetectors employing a simple device architecture with a larger active area that outshines by showing efficient and comparable performance under the self-powered mode under low light conditions.
自从发现了最先进的混合卤化物钙钛矿以来,它们在光电子系统中的应用引起了相当大的关注。然而,铅(Pb)的毒性以及有机成分引起的挥发性阻碍了它们未来的大规模市场发展。在此,合成了一种基于稳定的CsBiI的全无机无铅卤化物钙钛矿,并实现了其在光电探测器应用中的潜力。材料性能研究表明,该材料具有良好的晶体质量和适合光电探测的强吸收系数。基于扩展吸收获得了一个有趣的特性,即弱声子辅助跃迁的特征。此外,形态特征显示出CsBiI生长良好的微米级晶体。所制备的光电探测器在零偏压状态下实现了自供电运行,暗电流非常低,仅为0.46 pA。得益于此,实现了1.4×10的改进的光敏性。此外,除了自供电光电探测外,该光电探测器在0.1 mW/cm²的弱光信号下,在0.25 cm²的较大有源面积下,还表现出宽光谱响应(450 - 950 nm)、高探测率(1.2×10¹²/1.6×10¹² Jones)、高响应度(0.59 μA/W/3.8 mA/W)和快速响应速度(毫秒级)。该光电探测器显示出高光稳定性,在几乎2000次重复循环中都能很好地保持,没有降解。更引人注目的是,基于钙钛矿薄膜的核心稳定性,即使在暴露于潮湿空气(相对湿度75%)后,该光电探测器仍能实现3个月(90天)的出色长期稳定性。因此,这项研究突出了少数采用简单器件结构、具有较大有源面积的无铅全无机钙钛矿光电探测器之一,该探测器在低光条件下的自供电模式下表现出高效且可比的性能,脱颖而出。