Josell D, Williams M E, Ambrozik S, Zhang C, Moffat T P
Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
J Electrochem Soc. 2019;166(12). doi: https://doi.org/10.1149/2.0261912jes.
This work extends previously detailed void-free, bottom-up feature filling in a near-neutral NaAu(SO) + NaSO electrolyte containing micromolar concentrations of Bi. Bottom-up electrodeposition in 17 μm and 45 μm tall trenches with an aspect ratio greater than 10 is demonstrated using potentiostatic, stepped potential and/or stepped current control. Strategies to shorten the incubation period associated with slow deposition on uniformly passivated surfaces, which precedes bottom-up filling at fixed potential, are explored. The first electron backscatter diffraction studies of bottom-up filled Au deposits reveal large grains that span the trench width and often exceed tens of micrometers in length. In contrast, smaller grains are observed near the tops of filled trenches and, under conditions of marginal filling, mid-height within them.
这项工作扩展了之前详细介绍的在含有微摩尔浓度铋的近中性NaAu(SO) + NaSO电解质中进行无空隙、自下而上的特征填充。利用恒电位、阶梯电位和/或阶梯电流控制,展示了在纵横比大于10的17μm和45μm高的沟槽中进行自下而上的电沉积。探索了缩短与在均匀钝化表面上缓慢沉积相关的潜伏期的策略,这种缓慢沉积在固定电位下的自下而上填充之前。对自下而上填充的金沉积物的首次电子背散射衍射研究揭示了跨越沟槽宽度且长度通常超过几十微米的大晶粒。相比之下,在填充沟槽顶部附近以及在边缘填充条件下沟槽中部高度处观察到较小的晶粒。