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探索自下而上的金填充法制造衍射光栅的极限。

Exploring the Limits of Bottom-Up Gold Filling to Fabricate Diffraction Gratings.

作者信息

Josell D, Ambrozik S, Williams M E, Hollowell A E, Arrington C, Muramoto S, Moffat T P

机构信息

Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.

Microsystems and Engineering Sciences Applications (MESA) Complex, Sandia National Laboratory, Albuquerque, New Mexico 87123, USA.

出版信息

J Electrochem Soc. 2019;166(16). doi: https://doi.org/10.1149/2.1131915jes.

Abstract

Gold deposition on rotating disk electrodes, Bi adsorption on planar Au films and superconformal Au filling of trenches up to 45 μm deep are examined in Bi-containing NaAu(SO) electrolytes with pH between 9.5 and 11.5. Higher pH is found to increase the potential-dependent rate of Bi adsorption on planar Au surfaces, shortening the incubation period that precedes active Au deposition on planar surfaces and bottom-up filling in patterned features. Decreased contact angles between the Au seeded sidewalls and bottom-up growth front also suggest improved wetting. The bottom-up filling dynamic in trenches is, however, lost at pH 11.5. The impact of Au concentration, 80 mmol/L versus 160 mmol/L NaAu(SO), on bottom-up filling is examined in trenches up to ≈ 210 μm deep with aspect ratio of depth/width ≈ 30. The microstructures of void-free, bottom-up filled trench arrays used as X-ray diffraction gratings are characterized by scanning electron microscopy (SEM) and Electron Backscatter Diffraction (EBSD), revealing marked spatial variation of the grain size and orientation within the filled features.

摘要

在pH值介于9.5和11.5之间的含铋NaAu(SO)电解液中,研究了旋转圆盘电极上的金沉积、平面金膜上的铋吸附以及深度达45μm的沟槽的超共形金填充。发现较高的pH值会增加铋在平面金表面吸附的电位依赖速率,缩短平面表面上活性金沉积和图案化特征自下而上填充之前的潜伏期。金种子侧壁与自下而上生长前沿之间接触角的减小也表明润湿性得到改善。然而,在pH值为11.5时,沟槽中的自下而上填充动态消失。在深度约为210μm、深宽比约为30的沟槽中,研究了金浓度(80 mmol/L与160 mmol/L NaAu(SO))对自下而上填充的影响。用作X射线衍射光栅的无空隙、自下而上填充的沟槽阵列的微观结构通过扫描电子显微镜(SEM)和电子背散射衍射(EBSD)进行表征,揭示了填充特征内晶粒尺寸和取向的显著空间变化。

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本文引用的文献

1
Accelerated Bottom-Up Gold Filling of Metallized Trenches.
J Electrochem Soc. 2019;166(12). doi: https://doi.org/10.1149/2.0261912jes.
2
Bottom-up Filling of Damascene Trenches with Gold in a Sulfite Electrolyte.
J Electrochem Soc. 2019;166(1). doi: https://doi.org/10.1149/2.0041901jes.
3
Superconformal Copper Deposition in Through Silicon Vias by Suppression-Breakdown.
J Electrochem Soc. 2018;165(2). doi: https://doi.org/10.1149/2.0061802jes.
4
Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias.
J Electrochem Soc. 2019;166(1). doi: https://doi.org/10.1149/2.0341901jes.
5
Superconformal Bottom-Up Gold Deposition in High Aspect Ratio Through Silicon Vias.
J Electrochem Soc. 2017;164(6):D327-D334. doi: 10.1149/2.1311706jes. Epub 2017 Apr 14.

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