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抑制用于明亮发光二极管的溴化铯铅钙钛矿纳米晶体薄膜中的俄歇复合

Suppressing Auger Recombination in Cesium Lead Bromide Perovskite Nanocrystal Film for Bright Light-Emitting Diodes.

作者信息

Yao Ji-Song, Zhang Jia-Chen, Wang Li, Wang Kun-Hua, Ru Xue-Chen, Yang Jun-Nan, Wang Jing-Jing, Chen Xing, Song Yong-Hui, Yin Yi-Chen, Lan Yi-Feng, Zhang Qun, Yao Hong-Bin

机构信息

Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.

Department of Applied Chemistry, Hefei Science Center of Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China.

出版信息

J Phys Chem Lett. 2020 Nov 5;11(21):9371-9378. doi: 10.1021/acs.jpclett.0c02777. Epub 2020 Oct 23.

Abstract

All-inorganic cesium lead halide perovskite colloidal nanocrystals are attractive for next-generation light-emitting diodes because of their high color purity, but the nonradiative Auger recombination in perovskite nanocrystal film limits the efficiency and brightness of the fabricated devices. Here, we introduce a surface-engineering process to exchange the original long-chain oleic acid/oleylamine ligands by the cerium-tributylphosphine oxide hybrid ligands to suppress nonradiative Auger recombination in CsPbBr NC film for bright and low-efficiency roll-off light-emitting diodes. Using ultrafast transient absorption and time-resolved photoluminescence spectroscopy, we demonstrate that the hybrid ligand passivation can efficiently remove surface trap states to enhance radiative recombination and homogenize the exciton concentration to suppress nonradiative Auger recombination in the CsPbBr nanocrystal thin film. Consequently, we fabricate a light-emitting diode with efficient charge injection into the CsPbBr nanocrystal emitting layer, achieving a pronounced improvement of electroluminescence with an external quantum efficiency from 5.5% to 9.1%. More importantly, the efficiency roll-off characteristics of high-brightness light-emitting diodes is effectively mitigated. Our reported hybrid ligand passivation suppressed Auger recombination strategy shows a great potential for fabricating high-brightness cesium lead halide perovskite light-emitting diodes.

摘要

全无机铯铅卤化物钙钛矿胶体纳米晶体因其高色纯度而对下一代发光二极管具有吸引力,但钙钛矿纳米晶体薄膜中的非辐射俄歇复合限制了所制备器件的效率和亮度。在此,我们引入一种表面工程工艺,用铈-三丁基氧化膦混合配体取代原来的长链油酸/油胺配体,以抑制CsPbBr纳米晶体薄膜中的非辐射俄歇复合,从而制备出明亮且效率滚降低的发光二极管。利用超快瞬态吸收和时间分辨光致发光光谱,我们证明混合配体钝化可以有效去除表面陷阱态,增强辐射复合,并使激子浓度均匀化,从而抑制CsPbBr纳米晶体薄膜中的非辐射俄歇复合。因此,我们制备了一种能够有效将电荷注入CsPbBr纳米晶体发光层的发光二极管,实现了电致发光的显著改善,外部量子效率从5.5%提高到9.1%。更重要的是,高亮度发光二极管的效率滚降特性得到了有效缓解。我们报道的混合配体钝化抑制俄歇复合策略在制备高亮度铯铅卤化物钙钛矿发光二极管方面显示出巨大潜力。

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