Field enhancement in microfluidic semiconductor nanowire array.

Nano-material integrated microfluidic platforms are increasingly being considered to accelerate biological sample preparation and molecular diagnostics. A major challenge in this context is the generation of high electric fields for electroporation of cell membranes. In this paper, we have studied a novel mechanism of generating a high electric field in the microfluidic channels by using an array of semiconductor nanowires. When an electrostatic field is applied across a semiconductor nanowire array, the electric field is localized near the nanowires and the field strength is higher than what was reported previously with various other micro-geometries. Nanowires made of ZnO, Si, and Si-SiO and their orientation and array spacing are considered design parameters. It is observed that for a given ratio of the spacing between nanowires to the diameter, the electric field enhancement near the edges of ZnO nanowires is nearly 30 times higher compared to Si or Si-SiO nanowire arrays. This enhancement is a combined effect of the unique geometry with a pointed tip with a hexagonal cross section, the piezoelectric and the spontaneous polarization in the ZnO nanowires, and the electro-kinetics of the interface fluid. Considering the field localization phenomena, the trajectories of cells in the channel are analyzed. For a given inter-nanowire spacing and an applied electric field, the channels with ZnO nanowire arrays have a greater probability of cell lysis in comparison to Si-based nanowire arrays. Detailed correlations between the cell lysis probability with the inter-nanowire spacing and the applied electric field are reported.