Jiang Chunxia, Li Rongbin, Wang Xin, Shang Hailong, Zhang Yong, Liaw Peter K
School of Materials Science and Engineering, Shanghai Dianji University, Shanghai 201306, China.
State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China.
Entropy (Basel). 2020 Feb 19;22(2):234. doi: 10.3390/e22020234.
In this study, high-entropy alloy films, namely, AlCrTaTiZr/AlCrTaTiZr-N, were deposited on the n-type (100) silicon substrate. Then, a copper film was deposited on the high-entropy alloy films. The diffusion barrier performance of AlCrTaTiZr/AlCrTaTiZr-N for Cu/Si connect system was investigated after thermal annealing for an hour at 600 °C, 700 °C, 800 °C, and 900 °C. There were no Cu-Si intermetallic compounds generated in the Cu/AlCrTaTiZr/AlCrTaTiZr-N/Si film stacks after annealing even at 900 °C through transmission electron microscopy (TEM) and atomic probe tomography (APT) analysis. The results indicated that AlCrTaTiZr/AlCrTaTiZr-N alloy films can prevent copper diffusion at 900 °C. The reason was investigated in this work. The amorphous structure of the AlCrTaTiZr layer has lower driving force to form intermetallic compounds; the lattice mismatch between the AlCrTaTiZr and AlCrTaTiZ-rN layers increased the diffusion distance of the Cu atoms and the difficulty of the Cu atom diffusion to the Si substrate.
在本研究中，高熵合金薄膜，即AlCrTaTiZr/AlCrTaTiZr-N，被沉积在n型（100）硅衬底上。然后，在高熵合金薄膜上沉积铜薄膜。在600℃、700℃、800℃和900℃下热退火一小时后，研究了AlCrTaTiZr/AlCrTaTiZr-N对Cu/Si连接系统的扩散阻挡性能。通过透射电子显微镜（TEM）和原子探针断层扫描（APT）分析，即使在900℃退火后，Cu/AlCrTaTiZr/AlCrTaTiZr-N/Si薄膜堆叠中也没有生成Cu-Si金属间化合物。结果表明，AlCrTaTiZr/AlCrTaTiZr-N合金薄膜在900℃时能防止铜扩散。本工作对其原因进行了研究。AlCrTaTiZr层的非晶结构形成金属间化合物的驱动力较低；AlCrTaTiZr和AlCrTaTiZ-rN层之间的晶格失配增加了Cu原子的扩散距离以及Cu原子扩散到Si衬底的难度。
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