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甲基端基和乙烯桥基对多孔有机硅酸盐玻璃薄膜的影响:傅里叶变换红外光谱、椭圆偏振光孔隙率测定法、发光数据集

Effect of methyl terminal and ethylene bridging groups on porous organosilicate glass films: FTIR, ellipsometric porosimetry, luminescence dataset.

作者信息

Rasadujjaman Md, Zhang Jinming, Mogilnikov Konstantin P, Vishnevskiy Alexey S, Zhang Jing, Baklanov Mikhail R

机构信息

North China University of Technology, Beijing, China.

Department of Physics, Dhaka University of Engineering & Technology, Gazipur, Bangladesh.

出版信息

Data Brief. 2021 Feb 18;35:106895. doi: 10.1016/j.dib.2021.106895. eCollection 2021 Apr.

Abstract

A dataset in this report is regarding an article, "A detailed ellipsometric porosimetry and positron annihilation spectroscopy study of porous organosilicate glass films with various ratios of methyl terminal and ethylene bridging groups" [1]. The data of porous organosilicate glass (OSG) low-k films was obtained by Fourier-Transform Infrared spectroscopy (FTIR), Ellipsometric Porosimetry (EP), Photoluminescence (PL) Spectroscopy. The data shows that the mechanical properties of OSG low-k films are principally controlled by introducing both terminal methyl and bridging organic groups, and porosity with proper pore size. The dataset presented here gives additional details regarding properties of carbon bridged OSGs presented in the paper [1]. Also, the data may give the impact of both terminal methyl and bridging ethylene groups on as deposited and thermally cured OSG films. Particularly, we added some details about FTIR, EP (especially related to calculation of the internal surface area) and UV induced luminescence. The data allow to test experimental and theoretical investigations of OSG low-k materials that might use in microelectronic fabrication industry and also might be used to extend beyond the analysis reported in the accompanying manuscript, and may aid for other applications of OSG materials.

摘要

本报告中的一个数据集与一篇文章相关,文章标题为《对具有不同比例甲基端基和乙烯桥基的多孔有机硅酸盐玻璃薄膜的详细椭偏孔隙率法和正电子湮没光谱研究》[1]。多孔有机硅酸盐玻璃(OSG)低介电常数薄膜的数据是通过傅里叶变换红外光谱(FTIR)、椭偏孔隙率法(EP)、光致发光(PL)光谱获得的。数据表明,OSG低介电常数薄膜的机械性能主要通过引入端基甲基和桥连有机基团以及具有合适孔径的孔隙率来控制。此处呈现的数据集给出了论文[1]中所介绍的碳桥连OSG特性的更多细节。此外,这些数据可能会揭示端基甲基和桥连乙烯基团对沉积态和热固化OSG薄膜的影响。特别地,我们补充了一些关于FTIR、EP(尤其是与内表面积计算相关的内容)以及紫外线诱导发光的细节。这些数据有助于对可能用于微电子制造行业的OSG低介电常数材料进行实验和理论研究,并且可能用于扩展随附手稿中所报道的分析范围,还可能有助于OSG材料的其他应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/09f3/7921473/c67234e82b72/gr1.jpg

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