通过化学压力大幅提高N型稀磁半导体Ba(Zn,Co)₂As₂的居里温度。

Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)[Formula: see text]As[Formula: see text].

作者信息

Fu Licheng, Gu Yilun, Zhi Guoxiang, Zhang Haojie, Zhang Rufei, Dong Jinou, Zhao Xueqin, Xie Lingfeng, Ning Fanlong

机构信息

Zhejiang Province Key Laboratory of Quantum Technology and Device and Department of Physics, Zhejiang University, Hangzhou, 310027 China.

Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 China.

出版信息

Sci Rep. 2021 Apr 7;11(1):7652. doi: 10.1038/s41598-021-86205-2.

DOI:10.1038/s41598-021-86205-2

PMID:33828123

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8027016/

Abstract

We report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn[Formula: see text]Co[Formula: see text])[Formula: see text]As[Formula: see text] which has a maximum [Formula: see text] [Formula: see text] 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by [Formula: see text] 0.3[Formula: see text] with 15[Formula: see text] Sr doping, but drastically increase the ferromagnetic transition temperature by 18[Formula: see text] to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As[Formula: see text] tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)[Formula: see text]As[Formula: see text] DMS.

摘要

我们报道了化学压力对最近报道的n型稀磁半导体Ba(Zn₁₋ₓCoₓ)₂As₂铁磁有序的影响，该半导体的最大居里温度Tc = 45 K。在As位掺杂Sb和在Ba位掺杂Sr分别会产生负化学压力和正化学压力。在保持四方晶体结构和n型载流子的同时，15% Sr掺杂使晶胞体积收缩0.3%，但铁磁转变温度急剧升高18 K至53 K。我们的实验明确表明，Zn(Co)As₄四面体的参数在Ba(Zn,Co)₂As₂稀磁半导体中铁磁有序的形成中起着至关重要的作用。