Li Jinchai, Gao Na, Cai Duanjun, Lin Wei, Huang Kai, Li Shuping, Kang Junyong
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Fujian Key Laboratory of Semiconductor Materials and Applications, CI center for OSED, College of Physical Science and Technology, Xiamen University, 361005 Xiamen, China.
Light Sci Appl. 2021 Jun 16;10:129. doi: 10.1038/s41377-021-00563-0. eCollection 2021.
As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light sources (200-280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence in preventing virus transmission, which further reveals their wide applications from biological, environmental, industrial to medical. However, the relatively low external quantum efficiencies (mostly lower than 10%) strongly restrict their wider or even potential applications, which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures. Here, we review recent progress in the development of novel concepts and techniques in AlGaN-based LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures. In addition, we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments.
正如在新冠疫情期间所展示的那样，先进的深紫外（DUV）光源（200-280纳米），如基于氮化铝镓（AlGaN）的发光二极管（LED）在防止病毒传播方面表现出色，这进一步揭示了它们在生物、环境、工业到医疗等领域的广泛应用。然而，相对较低的外量子效率（大多低于10%）严重限制了它们更广泛甚至潜在的应用，这与高铝含量的AlGaN半导体材料的固有特性尤其是它们的量子结构有关。在此，我们回顾了基于AlGaN的LED在新概念和技术开发方面的最新进展，并总结了多个物理领域作为有效控制和定制氮化物量子结构关键特性的工具包。此外，我们描述了进一步提高深紫外LED效率的关键挑战，并对未来发展进行了展望。
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