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溶液剪切薄膜晶体管中不对称Ph-BTBT-10人字结构的迁移率各向异性。

Mobility anisotropy in the herringbone structure of asymmetric Ph-BTBT-10 in solution sheared thin film transistors.

作者信息

Tamayo Adrián, Hofer Sebastian, Salzillo Tommaso, Ruzié Christian, Schweicher Guillaume, Resel Roland, Mas-Torrent Marta

机构信息

Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB 08193 Bellaterra Spain

Institute of Solid State Physics, Graz University of Technology Petersgasse 16 Graz 8010 Austria

出版信息

J Mater Chem C Mater. 2021 May 15;9(22):7186-7193. doi: 10.1039/d1tc01288f.

Abstract

Thin films of the organic semiconductor Ph-BTBT-10 and blends of this material with polystyrene have been deposited by a solution shearing technique at low (1 mm s) and high (10 mm s) coating velocities and implemented in organic field-effect transistors. Combined X-ray diffraction and electrical characterisation studies prove that the films coated at low speed are significantly anisotropic. The highest mobility is found along the coating direction, which corresponds to the crystallographic -axis. In contrast, at high coating speed the films are crystallographically less ordered but with better thin film homogeneity and exhibit isotropic electrical characteristics. Best mobilities are found in films prepared at high coating speeds with the blended semiconductor. This work demonstrates the interplay between the crystal packing and thin film morphology and uniformity and their impact on the device performance.

摘要

通过溶液剪切技术,已在低(1毫米/秒)和高(10毫米/秒)涂布速度下沉积了有机半导体Ph-BTBT-10薄膜及其与聚苯乙烯的混合物,并将其应用于有机场效应晶体管中。结合X射线衍射和电学表征研究证明,低速涂布的薄膜具有明显的各向异性。最高迁移率沿涂布方向,该方向对应于结晶学的c轴。相比之下,在高涂布速度下,薄膜的结晶学有序性较低,但具有更好的薄膜均匀性,并表现出各向同性的电学特性。在高涂布速度下制备的混合半导体薄膜中发现了最佳迁移率。这项工作展示了晶体堆积与薄膜形态和均匀性之间的相互作用及其对器件性能的影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4ac9/8191576/8254d459a699/d1tc01288f-f1.jpg

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