Gamel Mansur Mohammed Ali, Lee Hui Jing, Rashid Wan Emilin Suliza Wan Abdul, Ker Pin Jern, Yau Lau Kuen, Hannan Mahammad A, Jamaludin Md Zaini
Institute of Sustainable Energy, College of Engineering, Universiti Tenaga Nasional, Kajang 43000, Malaysia.
Department of Electrical and Electronics Engineering, College of Engineering, Universiti Tenaga Nasional, Kajang 43000, Malaysia.
Materials (Basel). 2021 Aug 30;14(17):4944. doi: 10.3390/ma14174944.
Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this global issue with supplementary generation of electrical energy. This paper presents a critical review on two dominant types of semiconductor materials, namely gallium antimonide (GaSb) and indium gallium arsenide (InGaAs), as the potential candidates for TPV cells. The advantages and drawbacks of non-epitaxy and epitaxy growth methods are well-discussed based on different semiconductor materials. In addition, this paper critically examines and summarizes the electrical cell performance of TPV cells made of GaSb, InGaAs and other narrow bandgap semiconductor materials. The cell conversion efficiency improvement in terms of structural design and architectural optimization are also comprehensively analyzed and discussed. Lastly, the practical applications, current issues and challenges of TPV cells are critically reviewed and concluded with recommendations for future research. The highlighted insights of this review will contribute to the increase in effort towards development of future TPV systems with improved cell conversion efficiency.
一般来说,废热通过人为活动被多余地排放到周围环境中,缺乏战略规划。因此,城市热岛效应和全球变暖随着时间的推移长期加剧。热光伏(TPV)系统有可能被部署用于收集废热并回收能量,通过补充发电来解决这一全球性问题。本文对两种主要类型的半导体材料,即锑化镓(GaSb)和铟镓砷(InGaAs)作为TPV电池的潜在候选材料进行了批判性综述。基于不同的半导体材料,对非外延和外延生长方法的优缺点进行了充分讨论。此外,本文批判性地研究并总结了由GaSb、InGaAs和其他窄带隙半导体材料制成的TPV电池的电学性能。还全面分析和讨论了在结构设计和架构优化方面提高电池转换效率的问题。最后,对TPV电池的实际应用、当前问题和挑战进行了批判性综述,并给出了未来研究的建议。本综述突出的见解将有助于加大对未来具有更高电池转换效率的TPV系统开发的投入。