硅基全电子发射-探测器对，工作频率达 250GHz。

All-Electronic Emitter-Detector Pairs for 250 GHz in Silicon.

机构信息

Institute of Applied Electrodynamics and Telecommunications, Vilnius University, LT-10257 Vilnius, Lithuania.

Research Group on Logistics and Defense Technology Management, General Jonas Žemaitis Military Academy of Lithuania, LT-10322 Vilnius, Lithuania.

出版信息

Sensors (Basel). 2021 Aug 28;21(17):5795. doi: 10.3390/s21175795.

DOI:10.3390/s21175795

PMID:34502686

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8434060/

Abstract

The spread of practical terahertz (THz) systems dedicated to the telecommunication, pharmacy, civil security, or medical markets requires the use of mainstream semiconductor technologies, such as complementary metal-oxide-semiconductor (CMOS) lines. In this paper, we discuss the operation of a CMOS-based free space all-electronic system operating near 250 GHz, exhibiting signal-to-noise ratio (SNR) with 62 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines the state-of-the-art detector based on CMOS field-effect-transistors (FET) and a harmonic voltage-controlled oscillator (VCO). Three generations of the oscillator circuit are presented, and the performance characterization techniques and their improvement are explained in detail. The manuscript presents different emitter-detector pair operation modalities, including spectroscopy and imaging.

摘要

实用太赫兹（THz）系统在电信、制药、民用安全或医疗市场的广泛应用需要使用主流半导体技术，如互补金属氧化物半导体（CMOS）线。在本文中，我们讨论了一种基于 CMOS 的自由空间全电子系统在 250GHz 附近的工作情况，该系统在直接检测模式下具有 62dB 的信噪比（SNR），对于 1Hz 等效噪声带宽。它结合了基于 CMOS 场效应晶体管（FET）的最先进的探测器和一个谐波电压控制振荡器（VCO）。本文介绍了三代振荡器电路，并详细解释了其性能表征技术及其改进。本文提出了不同的发射器-探测器对操作模式，包括光谱学和成像。