Yeh Pei-Chun, Ohkatsu Genki, Toyama Ryo, Tue Phan Trong, Ostrikov Kostya Ken, Majima Yutaka, Chiang Wei-Hung
Department of Chemical Engineering, National Taiwan University of Science Technology, Taipei 10607, Taiwan.
Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan.
Nanotechnology. 2021 Oct 6;32(50). doi: 10.1088/1361-6528/ac2845.
Single-electron transistors (SETs) represent a new generation of electronic devices with high charge sensitivity, high switching speed, and low power consumption. Here a simple and controlled fabrication of graphene quantum dot (GQD)-based SETs for photon detectors has been demonstrated. The plasma-synthesized GQDs exhibit stable photoluminescence and are successfully used as the Coulomb islands between heteroepitaxial spherical-gold/platinum (HS-Au/Pt) nanogap electrodes. The as-fabricated GQD-SETs enable photon detection with 410 nm excitation owing to the ability of GQDs to generate photoluminescence emission.
单电子晶体管(SETs)代表了新一代具有高电荷灵敏度、高开关速度和低功耗的电子器件。本文展示了一种用于光子探测器的基于石墨烯量子点(GQD)的单电子晶体管的简单且可控的制造方法。等离子体合成的石墨烯量子点表现出稳定的光致发光,并成功用作异质外延球形金/铂(HS-Au/Pt)纳米间隙电极之间的库仑岛。由于石墨烯量子点具有产生光致发光发射的能力,所制造的基于石墨烯量子点的单电子晶体管能够在410nm激发下实现光子探测。