通过Ba离子掺杂增强SiO-SnO:Er薄膜近红外发射的多种途径。

Multiple channels to enhance near-infrared emission from SiO-SnO:Er films by Ba ion doping.

作者信息

Zhang Yangyi, Wang Lixiang, Chen Jiaming, Hou Guozhi, Li Dongke, Xu Jun, Xu Ling, Chen Kunji

机构信息

National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210093, China.

School of Mechanical and Electrical Engineering, Chuzhou University, Anhui, 239000, China.

出版信息

Phys Chem Chem Phys. 2021 Oct 27;23(41):23711-23717. doi: 10.1039/d1cp03059k.

DOI:10.1039/d1cp03059k

PMID:34642714

Abstract

Ba ions co-doped SiO-SnO:Er thin films are prepared using a sol-gel method combined with a spin-coating technique and post-annealing treatment. The influence of Ba ion doping on the photoluminescence properties of thin films is carefully investigated. The enhancement of near-infrared (NIR) emission of Er ions by as much as 12 times is obtained co-doping with Ba ions. To illustrate the relevant mechanisms, X-ray diffraction, X-ray photoelectron spectroscopy and comprehensive spectroscopic measurements are carried out. The enhanced NIR emission induced by Ba co-doping can be explained by more oxygen vacancies, improved crystallinity and strong cross-relaxation processes between Er ions. The incorporation of Ba ions into SiO-SnO:Er thin films results in a considerable enhancement in the NIR emission, making the thin films more suitable for Si-based optical lasers and amplifiers.

摘要

采用溶胶-凝胶法结合旋涂技术和后退火处理制备了Ba离子共掺杂的SiO-SnO:Er薄膜。仔细研究了Ba离子掺杂对薄膜光致发光性能的影响。通过与Ba离子共掺杂，获得了Er离子近红外（NIR）发射增强高达12倍的效果。为了阐明相关机制，进行了X射线衍射、X射线光电子能谱和综合光谱测量。Ba共掺杂引起的近红外发射增强可以通过更多的氧空位、改善的结晶度以及Er离子之间强烈的交叉弛豫过程来解释。将Ba离子掺入SiO-SnO:Er薄膜中导致近红外发射显著增强，使薄膜更适合用于硅基光学激光器和放大器。