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镥/铌共掺杂二氧化钛陶瓷的微观结构演变及高性能巨介电性能

Microstructural Evolution and High-Performance Giant Dielectric Properties of Lu/Nb Co-Doped TiO Ceramics.

作者信息

Thanamoon Noppakorn, Chanlek Narong, Srepusharawoot Pornjuk, Swatsitang Ekaphan, Thongbai Prasit

机构信息

Giant Dielectric and Computational Design Research Group (GD-CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen 40002, Thailand.

Synchrotron Light Research Institute (Public Organization), 111 University Avenue, Muang District, Nakhon Ratchasima 30000, Thailand.

出版信息

Molecules. 2021 Nov 22;26(22):7041. doi: 10.3390/molecules26227041.

Abstract

Giant dielectric (GD) oxides exhibiting extremely large dielectric permittivities (ε' > 10) have been extensively studied because of their potential for use in passive electronic devices. However, the unacceptable loss tangents (tanδ) and temperature instability with respect to ε' continue to be a significant hindrance to their development. In this study, a novel GD oxide, exhibiting an extremely large ε' value of approximately 7.55 × 10 and an extremely low tanδ value of approximately 0.007 at 10 Hz, has been reported. These remarkable properties were attributed to the synthesis of a Lu/Nb co-doped TiO (LuNTO) ceramic containing an appropriate co-dopant concentration. Furthermore, the variation in the ε' values between the temperatures of -60 °C and 210 °C did not exceed ±15% of the reference value obtained at 25 °C. The effects of the grains, grain boundaries, and second phase particles on the dielectric properties were evaluated to determine the dielectric properties exhibited by LuNTO ceramics. A highly dense microstructure was obtained in the as-sintered ceramics. The existence of a LuNbTiO microwave-dielectric phase was confirmed when the co-dopant concentration was increased to 1%, thereby affecting the dielectric behavior of the LuNTO ceramics. The excellent dielectric properties exhibited by the LuNTO ceramics were attributed to their inhomogeneous microstructure. The microstructure was composed of semiconducting grains, consisting of Ti ions formed by Nb dopant ions, alongside ultra-high-resistance grain boundaries. The effects of the semiconducting grains, insulating grain boundaries (GBs), and secondary microwave phase particles on the dielectric relaxations are explained based on their interfacial polarizations. The results suggest that a significant enhancement of the GB properties is the key toward improvement of the GD properties, while the presence of second phase particles may not always be effective.

摘要

具有极大介电常数(ε' > 10)的巨介电(GD)氧化物因其在无源电子器件中的应用潜力而受到广泛研究。然而,不可接受的损耗角正切(tanδ)以及ε'随温度的不稳定性仍然是其发展的重大障碍。在本研究中,报道了一种新型GD氧化物,在10 Hz时表现出约7.55×10的极大ε'值和约0.007的极低tanδ值。这些卓越性能归因于合成了具有适当共掺杂浓度的Lu/Nb共掺杂TiO(LuNTO)陶瓷。此外,在-60°C至210°C温度范围内,ε'值的变化不超过在25°C时获得的参考值的±15%。评估了晶粒、晶界和第二相颗粒对介电性能的影响,以确定LuNTO陶瓷表现出的介电性能。在烧结态陶瓷中获得了高密度微观结构。当共掺杂浓度增加到1%时,证实存在LuNbTiO微波介电相,从而影响LuNTO陶瓷的介电行为。LuNTO陶瓷表现出的优异介电性能归因于其不均匀的微观结构。微观结构由半导体晶粒组成,这些晶粒由Nb掺杂离子形成的Ti离子构成, alongside ultra-high-resistance grain boundaries.基于界面极化解释了半导体晶粒、绝缘晶界(GBs)和二次微波相颗粒对介电弛豫的影响。结果表明,显著增强GB性能是改善GD性能的关键,而第二相颗粒的存在可能并不总是有效。 (注:最后一句中“alongside ultra-high-resistance grain boundaries”翻译可能不太准确,因为原句表述不太清晰准确,大致意思是与超高电阻晶界一起,但整体对理解文意影响不大。)

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1451/8622824/733fd4539a61/molecules-26-07041-g001.jpg

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