紫外辐照溶胶-凝胶旋涂法制备的AZO薄膜：增强的光电性能。
UV-irradiated sol-gel spin coated AZO thin films: enhanced optoelectronic properties.
作者信息
Khan Md Irfan, Neha Tasratur Reaj, Billah Md Muktadir
机构信息
Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1000, Bangladesh.
出版信息
Heliyon. 2022 Jan 11;8(1):e08743. doi: 10.1016/j.heliyon.2022.e08743. eCollection 2022 Jan.
Thin films of transparent conductive Al doped ZnO (AZO) thin films were produced via sol-gel spin coating route. Structural, optical, and electrical properties were explored for several dopant concentrations. Formation of crystalline AZO was verified by X-ray Diffraction (XRD) Analysis and structural analysis were carried out later from the XRD data. Highest band gap of 3.67 eV was found for 2 mol % AZO thin films. The average transmittance was found to be 84.19% in the visible spectra for the corresponding thin films. 2 mol% AZO also exhibited a minimum resistivity of 2.05 Ω-cm with a maximum value of figure of merit. Prolonged UV irradiation was applied to 2 mol % AZO thin films prior to annealing. It significantly modified the surface morphology of the film and provided shielding near UVA (315-378 nm) spectrum. This also enhanced the conductivity of the thin film by 3-fold compared to non-UV treated sample and decreased optical band gap significantly.
通过溶胶-凝胶旋涂法制备了透明导电掺铝氧化锌（AZO）薄膜。研究了几种掺杂浓度下薄膜的结构、光学和电学性能。通过X射线衍射（XRD）分析验证了结晶AZO的形成，并随后根据XRD数据进行了结构分析。发现2 mol%的AZO薄膜具有最高的3.67 eV带隙。相应薄膜在可见光谱中的平均透过率为84.19%。2 mol%的AZO还表现出最低的电阻率2.05 Ω·cm，品质因数最高。在退火之前，对2 mol%的AZO薄膜进行了长时间的紫外线照射。这显著改变了薄膜的表面形貌，并在UVA（315 - 378 nm）光谱附近提供了屏蔽。与未经过紫外线处理的样品相比，这也使薄膜的电导率提高了3倍，并显著降低了光学带隙。
Zotero 插件