Antić Željka, Prashanthi K, Kuzman Sanja, Periša Jovana, Ristić Zoran, Palkar V R, Dramićanin Miroslav D
University of Belgrade, Vinča Institute of Nuclear Sciences P.O. Box 522 Belgrade Serbia
University of Alberta, Department of Chemical & Materials Engineering Edmonton Canada
RSC Adv. 2020 Apr 30;10(29):16982-16986. doi: 10.1039/d0ra01896a. eCollection 2020 Apr 29.
A strategy for optical nanothermometry using the negative thermal quenching behavior of intrinsic BiFeO semiconductor nanoparticles has been reported here. X-ray diffraction measurement shows polycrystalline BiFeO nanoparticles with a rhombohedral distorted perovskite structure. Transmission electron microscopy shows agglomerated crystalline nanoparticles around 20 nm in size. Photoluminescence measurements show that intensity of the defect level emission increases significantly with temperature, while the intensity of near band emission and other defect levels emissions show an opposite trend. The most important figures of merit for luminescence nanothermometry: the absolute ( ) and the relative sensor sensitivity ( ) and the temperature resolution (Δ ) were effectively resolved and calculated. The relative sensitivity and temperature resolution values are found to be 2.5% K and 0.2 K, respectively which are among the highest reported values observed so far for semiconductors.
本文报道了一种利用本征BiFeO半导体纳米颗粒的负热猝灭行为进行光学纳米测温的策略。X射线衍射测量表明,BiFeO纳米颗粒为具有菱面体畸变钙钛矿结构的多晶。透射电子显微镜显示尺寸约为20 nm的团聚结晶纳米颗粒。光致发光测量表明,缺陷能级发射强度随温度显著增加,而近带发射和其他缺陷能级发射强度则呈现相反趋势。有效解析并计算了发光纳米测温的最重要品质因数:绝对灵敏度( )、相对传感器灵敏度( )和温度分辨率(Δ )。发现相对灵敏度和温度分辨率值分别为2.5% K和0.2 K,这是迄今为止报道的半导体中最高的值之一。