Lee Joonhyuk, Park Jun Kue, Lee Joon Woo, Heo Yunseok, Oh Yoon Seok, Lee Jae S, Cho Jinhyung, Jeen Hyoungjeen
Department of Physics, Pusan National University Busan 46241 Korea
Korea Multi-purpose Accelerator Complex, Korea Atomic Energy Research Institute Gyeongju 38180 Korea.
RSC Adv. 2020 Dec 16;10(72):44339-44343. doi: 10.1039/d0ra08533b. eCollection 2020 Dec 9.
Nitrogen ion implantation is a useful technique to put nitrogen ions into lattices. In this work, nitrogen ion implantation into epitaxial Mo films is performed to create a buried superconducting γ-MoN. Atomically flat epitaxial (110) Mo films are grown on (0001) AlO. By impinging nitrogen ions, where the beam energy is fixed to 20 keV, we observe (111) γ-MoN diffraction and the formation of a γ-MoN layer from X-ray reflectivity. Magnetization and transport measurements clearly support a superconducting layer in the implanted film. Our strategy shows that formation of a buried superconducting layer can be achieved through ion implantation and self-annealing.
氮离子注入是一种将氮离子引入晶格的有用技术。在这项工作中,对外延钼薄膜进行氮离子注入以形成埋藏的超导γ-MoN。在(0001)AlO上生长原子级平整的外延(110)钼薄膜。通过撞击氮离子(束能量固定为20 keV),我们从X射线反射率观察到(111)γ-MoN衍射以及γ-MoN层的形成。磁化和输运测量清楚地支持了注入薄膜中的超导层。我们的策略表明,可以通过离子注入和自退火来实现埋藏超导层的形成。