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成像过渡金属二硫属化物中的动态激子相互作用和耦合

Imaging dynamic exciton interactions and coupling in transition metal dichalcogenides.

作者信息

Purz Torben L, Martin Eric W, Holtzmann William G, Rivera Pasqual, Alfrey Adam, Bates Kelsey M, Deng Hui, Xu Xiaodong, Cundiff Steven T

机构信息

Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA.

MONSTR Sense Technologies LLC, Ann Abor, Michigan 48104, USA.

出版信息

J Chem Phys. 2022 Jun 7;156(21):214704. doi: 10.1063/5.0087544.

Abstract

Transition metal dichalcogenides (TMDs) are regarded as a possible material platform for quantum information science and related device applications. In TMD monolayers, the dephasing time and inhomogeneity are crucial parameters for any quantum information application. In TMD heterostructures, coupling strength and interlayer exciton lifetimes are also parameters of interest. However, many demonstrations in TMDs can only be realized at specific spots on the sample, presenting a challenge to the scalability of these applications. Here, using multi-dimensional coherent imaging spectroscopy, we shed light on the underlying physics-including dephasing, inhomogeneity, and strain-for a MoSe monolayer and identify both promising and unfavorable areas for quantum information applications. We, furthermore, apply the same technique to a MoSe/WSe heterostructure. Despite the notable presence of strain and dielectric environment changes, coherent and incoherent coupling and interlayer exciton lifetimes are mostly robust across the sample. This uniformity is despite a significantly inhomogeneous interlayer exciton photoluminescence distribution that suggests a bad sample for device applications. This robustness strengthens the case for TMDs as a next-generation material platform in quantum information science and beyond.

摘要

过渡金属二硫属化物(TMDs)被视为量子信息科学及相关器件应用的一种潜在材料平台。在TMD单分子层中,退相时间和不均匀性是任何量子信息应用的关键参数。在TMD异质结构中,耦合强度和层间激子寿命也是人们感兴趣的参数。然而,TMDs中的许多演示只能在样品上的特定位置实现,这给这些应用的可扩展性带来了挑战。在这里,我们使用多维相干成像光谱,揭示了MoSe单分子层的潜在物理特性,包括退相、不均匀性和应变,并确定了量子信息应用中既有前景又不利的区域。此外,我们将相同的技术应用于MoSe/WSe异质结构。尽管存在明显的应变和介电环境变化,但整个样品的相干和非相干耦合以及层间激子寿命大多是稳健的。尽管层间激子光致发光分布明显不均匀,这表明该样品不适用于器件应用,但这种稳健性增强了TMDs作为量子信息科学及其他领域下一代材料平台的理由。

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