Gu Yiyi, Zhang Lizhi, Cai Hui, Liang Liangbo, Liu Chenze, Hoffman Anna, Yu Yiling, Houston Austin, Puretzky Alexander A, Duscher Gerd, Rack Philip D, Rouleau Christopher M, Meng Xiangmin, Yoon Mina, Geohegan David B, Xiao Kai
Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States.
Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
ACS Nano. 2022 Sep 27;16(9):13900-13910. doi: 10.1021/acsnano.2c02711. Epub 2022 Jul 1.
PdSe has a layered structure with an unusual, puckered Cairo pentagonal tiling. Its atomic bond configuration features planar 4-fold-coordinated Pd atoms and intralayer Se-Se bonds that enable polymorphic phases with distinct electronic and quantum properties, especially when atomically thin. PdSe is conventionally orthorhombic, and direct synthesis of its metastable polymorphic phases is still a challenge. Here, we report an ambient-pressure chemical vapor deposition approach to synthesize metastable monoclinic PdSe. Monoclinic PdSe is shown to be synthesized selectively under Se-deficient conditions that induce Se vacancies. These defects are shown by first-principles density functional theory calculations to reduce the free energy of the metastable monoclinic phase, thereby stabilizing it during synthesis. The structure and composition of the monoclinic PdSe crystals are identified and characterized by scanning transmission electron microscopy imaging, convergent beam electron diffraction, and electron energy loss spectroscopy. Polarized Raman spectroscopy of the monoclinic PdSe flakes reveals their strong in-plane optical anisotropy. Electrical transport measurements show that the monoclinic PdSe exhibits n-type charge carrier conduction with electron mobilities up to ∼298 cm V s and a strong in-plane electron mobility anisotropy of ∼1.9. The defect-mediated growth pathway identified in this work is promising for phase-selective direct synthesis of other 2D transition metal dichalcogenides.
二硒化钯具有层状结构,其具有不寻常的、褶皱的开罗五角形平铺。其原子键构型的特点是平面内四配位的钯原子和层内硒-硒键,这使得它能够形成具有不同电子和量子特性的多晶相,特别是在原子级薄的时候。二硒化钯通常为正交晶系,直接合成其亚稳多晶相仍然是一个挑战。在此,我们报道了一种常压化学气相沉积方法来合成亚稳单斜二硒化钯。结果表明,在诱导硒空位的缺硒条件下可选择性地合成单斜二硒化钯。第一性原理密度泛函理论计算表明,这些缺陷降低了亚稳单斜相的自由能,从而在合成过程中使其稳定。通过扫描透射电子显微镜成像、会聚束电子衍射和电子能量损失谱对单斜二硒化钯晶体的结构和组成进行了鉴定和表征。单斜二硒化钯薄片的偏振拉曼光谱揭示了其强烈的面内光学各向异性。电输运测量表明,单斜二硒化钯表现出n型电荷载流子传导,电子迁移率高达~298 cm² V⁻¹ s⁻¹,面内电子迁移率的强烈各向异性约为1.9。这项工作中确定的缺陷介导生长途径对于其他二维过渡金属二硫属化物的相选择性直接合成具有前景。