TiO薄膜的后处理可实现用于太阳能电池应用的高质量SbSe薄膜沉积。

Post-Treatment of TiO Film Enables High-Quality SbSe Film Deposition for Solar Cell Applications.

作者信息

Wang Yan, Tang Rongfeng, Huang Lei, Qian Chen, Lian Weitao, Zhu Changfei, Chen Tao

机构信息

CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, Anhui Province, China.

Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia.

出版信息

ACS Appl Mater Interfaces. 2022 Jul 27;14(29):33181-33190. doi: 10.1021/acsami.2c07157. Epub 2022 Jul 12.

DOI:10.1021/acsami.2c07157

PMID:35820105

Abstract

The TiO thin film is considered as a promising wide band gap electron-transporting material. However, due to the strong Ti-O bond, it displays an inert surface characteristic causing difficulty in the adsorption and deposition of metal chalcogenide films such as SbSe. In this study, a simple CdCl post-treatment is conducted to functionalize the TiO thin film, enabling the induction of nucleation sites and growth of high-quality SbSe. The interfacial treatment optimizes the conduction band offset of TiO/SbSe and leads to an essentially improved TiO/SbSe heterojunction. With this convenient interface functionalization, the power conversion efficiency of the SbSe solar cell is remarkably improved from 2.02 to 6.06%. This study opens up a new avenue for the application of TiO as a wide band gap electron-transporting material in antimony chalcogenide solar cells.

摘要

TiO薄膜被认为是一种很有前景的宽带隙电子传输材料。然而，由于Ti-O键很强，它表现出惰性表面特性，导致诸如SbSe等金属硫族化物薄膜的吸附和沉积困难。在本研究中，进行了简单的CdCl后处理以使TiO薄膜功能化，从而能够诱导成核位点并生长高质量的SbSe。界面处理优化了TiO/SbSe的导带偏移，并导致TiO/SbSe异质结得到实质性改善。通过这种便捷的界面功能化，SbSe太阳能电池的功率转换效率从2.02%显著提高到6.06%。本研究为TiO作为宽带隙电子传输材料在锑硫族化物太阳能电池中的应用开辟了一条新途径。