用于高性能光电化学紫外光探测器的金属有机框架衍生氧化铟微棒

MOF-Derived InO Microrods for High-Performance Photoelectrochemical Ultraviolet Photodetectors.

作者信息

Cui MengQi, Shao Zhitao, Qu LiHang, Liu Xin, Yu Huan, Wang Yunxia, Zhang Yunxiao, Fu Zhendong, Huang Yuewu, Feng Wei

机构信息

College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China.

Tianjin Jinhang Technical Physics Institute, Tianjin 300308, China.

出版信息

ACS Appl Mater Interfaces. 2022 Aug 31;14(34):39046-39052. doi: 10.1021/acsami.2c09968. Epub 2022 Aug 18.

DOI:10.1021/acsami.2c09968

PMID:35981319

Abstract

Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (InO)-based photoelectrochemical (PEC) UV PDs are rare. In this work, we explore the photoresponse of InO-based PEC UV PDs for the first time. InO microrods (MRs) were synthesized by a hydrothermal method with subsequent annealing. InO MR PEC PDs have good UV photoresponse, showing a high responsivity of 21.19 mA/W and high specific detectivity of 2.03 × 10 Jones, which surpass most aqueous-type PEC UV PDs. Moreover, InO MR PEC PDs have good multicycle and long-term stability irradiated by 365 nm. Our results prove that InO holds great promise in high-performance PEC UV PDs.

摘要

紫外光电探测器（UV PDs）因其在光通信、导弹跟踪和火灾预警等广泛应用而备受关注。宽带隙金属氧化物半导体材料因其独特的光电特性和良好的稳定性，已成为高性能紫外光电探测器发展的焦点。与其他宽带隙材料相比，基于氧化铟（InO）的光电化学（PEC）紫外光电探测器的研究较少。在这项工作中，我们首次探索了基于InO的PEC紫外光电探测器的光响应。通过水热法合成了InO微棒（MRs），并进行了后续退火处理。InO MR PEC PDs具有良好的紫外光响应，显示出21.19 mA/W的高响应度和2.03×10琼斯的高比探测率，超过了大多数水相型PEC紫外光电探测器。此外，InO MR PEC PDs在365 nm照射下具有良好的多周期和长期稳定性。我们的结果证明，InO在高性能PEC紫外光电探测器中具有巨大潜力。