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基于钛酸锶钡薄膜的智能传感多功能性

Smart Sensing Multifunctionalities Based on Barium Strontium Titanate Thin Films.

作者信息

Wang Linghua, Zhu Minmin, Shao Yong, Zhao Yida, Wei Can, Gao Langfeng, Bao Yiping

机构信息

College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China.

FZU-Jinjiang Joint Institute of Microelectronics, Jinjiang Science and Education Park, Fuzhou University, Jinjiang 362200, China.

出版信息

Sensors (Basel). 2022 Sep 22;22(19):7183. doi: 10.3390/s22197183.

Abstract

Sensors that have low power consumption, high scalability and the ability of rapidly detecting multitudinous external stimulus are of great value in cyber-physical interactive applications. Herein, we reported the fabrication of ferroelectric barium strontium titanate ((BaSr)TiO, BST) thin films on silicon substrates by magnetron sputtering. The as-grown BST films have a pure perovskite structure and exhibit excellent ferroelectric characteristics, such as a remnant polarization of 2.4 μC/cm, a ferro-to-paraelectric (tetragonal-to-cubic) phase transition temperature of 31.2 °C, and a broad optical bandgap of 3.58 eV. Capacitor-based sensors made from the BST films have shown an outstanding average sensitivity of 0.10 mV·Pa in the 10-80 kPa regime and work extremely steadily over 1000 cycles. More importantly, utilizing the Pockels effect, optical manipulation in BST can be also realized by a smaller bias and its electro-optic coefficient r is estimated to be 83.5 pmV, which is 2.6 times larger than in the current standard material (LiNbO) for electro-optical devices. Our work established BST thin film as a powerful design paradigm toward on-chip integrations with diverse electronics into sensors via CMOS-comparable technique.

摘要

具有低功耗、高可扩展性以及能够快速检测多种外部刺激能力的传感器在信息物理交互应用中具有重要价值。在此,我们报道了通过磁控溅射在硅衬底上制备铁电钛酸钡锶((BaSr)TiO,BST)薄膜。生长的BST薄膜具有纯钙钛矿结构,并表现出优异的铁电特性,如剩余极化强度为2.4 μC/cm,铁电-顺电(四方-立方)相变温度为31.2 °C,以及3.58 eV的宽光学带隙。由BST薄膜制成的基于电容器的传感器在10 - 80 kPa范围内表现出0.10 mV·Pa的出色平均灵敏度,并且在超过1000次循环中工作极其稳定。更重要的是,利用泡克尔斯效应,在BST中通过较小的偏置也可以实现光操纵,其电光系数r估计为83.5 pm/V,这比当前电光器件的标准材料(LiNbO)大2.6倍。我们的工作确立了BST薄膜作为一种强大的设计范例,通过与CMOS兼容的技术将各种电子器件集成到芯片上的传感器中。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b1ac/9573459/234bf0f91b71/sensors-22-07183-g001.jpg

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