Qiu Qinxi, Ma Wanli, Li Jingbo, Jiang Lin, Mao Wangchen, Lu Xuehui, Yao Niangjuan, Shi Yi, Huang Zhiming
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, P. R. China.
University of Chinese Academy of Sciences, 19 Yu Quan Road, Beijing 100049, P. R. China.
iScience. 2022 Sep 26;25(10):105217. doi: 10.1016/j.isci.2022.105217. eCollection 2022 Oct 21.
Silicon (Si) is the most important semiconductor material broadly used in both electronics and optoelectronics. However, the performance of Si-based room temperature detectors is far below the requirements for direct detection in the terahertz (THz) band, a very promising electromagnetic band for the next-generation technology. Here, we report a high sensitivity of room temperature THz photodetector utilizing the electromagnetic induced well mechanism with an SOI-based structure for easy integration. The detector achieves a responsivity of 122 kV W, noise equivalent power (NEP) of 0.16 pW Hz, and a fast response of 1.29 μs at room temperature. The acquired NEP of the detector is ∼2 orders lower in magnitude than that of other types of Si-based detectors. Our results pave the way to realize Si-based THz focal plane arrays, which can be used in a wide range of applications, such as medical diagnosis, remote sensing, and security inspection.
硅（Si）是电子和光电子领域广泛使用的最重要的半导体材料。然而，基于硅的室温探测器的性能远低于太赫兹（THz）波段直接探测的要求，太赫兹波段是下一代技术非常有前景的电磁波段。在此，我们报道了一种基于电磁感应阱机制的高灵敏度室温太赫兹探测器，其采用基于绝缘体上硅（SOI）的结构以便于集成。该探测器在室温下实现了122 kV/W的响应度、0.16 pW/Hz的噪声等效功率（NEP）以及1.29 μs的快速响应。所获得的探测器的NEP在量级上比其他类型的基于硅的探测器低约2个数量级。我们的结果为实现基于硅的太赫兹焦平面阵列铺平了道路，该阵列可用于广泛的应用，如医学诊断、遥感和安全检查。
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