Controllable digital and analog resistive switching behavior of 2D layered WSe nanosheets for neuromorphic computing.

Memristors with controllable resistive switching (RS) behavior have been considered as promising candidates for synaptic devices in next-generation neuromorphic computing. In this work, two-terminal memristors with controllable digital and analog RS behavior are fabricated based on two-dimensional (2D) WSe nanosheets. Under a relatively high operating voltage of 4 V, the memristor demonstrates stable and reliable non-volatile bipolar digital RS with a high switching ratio of 6.3 × 10. On the other hand, under a relatively low operation voltage, the memristor exhibits analog RS with a series of tunable resistance states. The fabricated memristors can work as an artificial synapse with fundamental synaptic functions, such as long-term potentiation (LTP) and depression (LTD) as well as paired-pulse facilitation (PPF). More importantly, the memristor demonstrates high conductance modulation linearity with the calculated nonlinear parameter for conductance as -0.82 in the LTP process, which is beneficial to improving the accuracy of neuromorphic computing. Furthermore, the neuromorphic computing of file types and image recognition can be emulated based on a constructed three-layer artificial neural network (ANN) with a recognition accuracy that can reach up to 95.9% for small digits. In addition, memristors can be used to emulate the learning-forgetting experience of the human brain. Consequently, the memristor based on 2D WSe nanosheets not only exhibits controllable RS behavior but also simulates synaptic functions and is expected to be a potential candidate for future neuromorphic computing applications.