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实现电路系统中的 Hopf 绝缘体。

Realization of a Hopf Insulator in Circuit Systems.

机构信息

Wuhan Institute of Quantum Technology, Wuhan 430206, China.

School of Physics and Technology, Wuhan University, Wuhan 430072, China.

出版信息

Phys Rev Lett. 2023 Feb 3;130(5):057201. doi: 10.1103/PhysRevLett.130.057201.

Abstract

Three-dimensional (3D) two-band Hopf insulators are a paradigmatic example of topological phases beyond the topological classifications based on powerful methods like K theory and symmetry indicators. Since this class of topological insulating phases was theoretically proposed in 2008, they have attracted significant interest owing to their conceptual novelty, connection to knot theory, and many fascinating physical properties. However, because their realization requires special forms of long-range spin-orbit coupling, they have not been achieved in any 3D system yet. Here, we report the first experimental realization of the long-sought-after Hopf insulator in a 3D circuit system. To implement the Hopf insulator, we construct basic pseudospin modules and connection modules that can realize 2×2-matrix elements and then design the circuit network according to a tight-binding Hopf insulator Hamiltonian constructed by the Hopf map. By simulating the band structure of the designed circuit network and calculating the Hopf invariant, we find that the circuit realizes a Hopf insulator with Hopf invariant equaling 4. Experimentally, we measure the band structure of a printed circuit board and find the observed properties of the bulk bands and topological surface states are in good agreement with the theoretical predictions, verifying the bulk-boundary correspondence of the Hopf insulator. Our scheme brings the experimental study of Hopf insulators to reality and opens the door to the implementation of more unexplored topological phases beyond the known topological classifications.

摘要

三维(3D)双带 Hopf 绝缘体是拓扑相的一个典范例子,超越了基于 K 理论和对称指标等强大方法的拓扑分类。自 2008 年理论上提出这类拓扑绝缘相以来,由于其概念新颖性、与纽结理论的联系以及许多迷人的物理性质,引起了人们的极大兴趣。然而,由于其实现需要特殊形式的长程自旋轨道耦合,因此它们尚未在任何 3D 系统中实现。在这里,我们报告了在 3D 电路系统中首次实现长期以来备受期待的 Hopf 绝缘体。为了实现 Hopf 绝缘体,我们构建了基本的赝自旋模块和连接模块,可以实现 2×2 矩阵元,然后根据 Hopf 映射构造的紧束缚 Hopf 绝缘体哈密顿量来设计电路网络。通过模拟设计电路网络的能带结构并计算 Hopf 不变量,我们发现该电路实现了具有 Hopf 不变量等于 4 的 Hopf 绝缘体。实验上,我们测量了印刷电路板的能带结构,并发现观察到的体带和拓扑表面态的性质与理论预测非常吻合,验证了 Hopf 绝缘体的体边界对应关系。我们的方案将 Hopf 绝缘体的实验研究带入了现实,并为实现超越已知拓扑分类的更多未探索拓扑相开辟了道路。

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