通过原子探针断层扫描技术实现的氮填充纳米空洞富集导致的WO薄膜中的压电力响应。

The Piezoresponse in WO Thin Films Due to N-Filled Nanovoids Enrichment by Atom Probe Tomography.

作者信息

Pineda-Domínguez Pamela M, Boll Torben, Nogan John, Heilmaier Martin, Hurtado-Macías Abel, Ramos Manuel

机构信息

Departamento de Física y Matemáticas, Instituto de Ingeniería y Tecnología, Universidad Autónoma de Ciudad Juárez, Avenida del Charro 450 N, Cd. Juárez, Chihuahua 32310, Mexico.

Institut für Angewandte Materialien-Werkstoffkunde (IAM-WK), Karlsruhe Institute of Technology, Engelbert-Arnold-Strasse 4, 76131 Karlsruhe, Germany.

出版信息

Materials (Basel). 2023 Feb 7;16(4):1387. doi: 10.3390/ma16041387.

DOI:10.3390/ma16041387

PMID:36837019

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9960742/

Abstract

Tungsten trioxide (WO) is a versatile -type semiconductor with outstanding chromogenic properties highly used to fabricate sensors and electrochromic devices. We present a comprehensive experimental study related to piezoresponse with piezoelectric coefficient = 35 pmV on WO thin films ~200 nm deposited using RF-sputtering onto alumina (AlO) substrate with post-deposit annealing treatment of 400 °C in a 3% H/N-forming gas environment. X-ray diffraction (XRD) confirms a mixture of orthorhombic and tetragonal phases of WO with domains with different polarization orientations and hysteresis behavior as observed by piezoresponse force microscopy (PFM). Furthermore, using atom probe tomography (APT), the microstructure reveals the formation of N-filled nanovoids that acts as strain centers producing a local deformation of the WO lattice into a non-centrosymmetric structure, which is related to piezoresponse observations.

摘要

三氧化钨（WO₃）是一种多功能的n型半导体，具有出色的显色特性，被广泛用于制造传感器和电致变色器件。我们进行了一项全面的实验研究，该研究涉及在使用射频溅射法沉积在氧化铝（Al₂O₃）衬底上的约200纳米厚的WO₃薄膜上的压电响应，该薄膜在3% H₂/N₂形成气体环境中经过400°C的沉积后退火处理，其压电系数d₃₃ = 35 pm/V。X射线衍射（XRD）证实了WO₃的正交相和四方相的混合物，通过压电响应力显微镜（PFM）观察到具有不同极化取向和滞后行为的畴。此外，使用原子探针断层扫描（APT），微观结构揭示了N填充纳米空洞的形成，这些纳米空洞充当应变中心，使WO₃晶格局部变形为非中心对称结构，这与压电响应观察结果相关。