Institute of Microstructure Technology, Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany.
Light Technology Institute, Karlsruhe Institute of Technology, Engesserstrasse 13, 76131 Karlsruhe, Germany.
Nano Lett. 2023 Mar 8;23(5):1637-1644. doi: 10.1021/acs.nanolett.2c02944. Epub 2023 Feb 27.
Perovskite gain materials can sustain continuous-wave lasing at room-temperature. A first step toward the unachieved goal of electrically excited lasing would be an improvement in gain when electrical stimulation is added to the optical. However, to date, electrical stimulation supplementing optical has reduced gain performance. We find that amplified spontaneous emission (ASE) in a CsPbBr perovskite light-emitting diode (LED) held under invariant subthreshold optical excitation can be turned on/off by the addition/removal of an electric field. A positive bias voltage leads to a factor of 3 reduction in the optical ASE threshold, the cause of which can be attributed to an enhancement of the radiative rate. The slow components (10 s time scale) of the modulation in the photoluminescence and ASE when the voltage is changed suggest that the relocation of mobile ions trigger the increased radiative rate and observed lowering of ASE thresholds.
钙钛矿增益材料可以在室温下持续产生连续波激光。实现电泵浦激光这一尚未达成的目标的第一步是,在光激发的基础上增加电刺激,从而提高增益。然而,迄今为止,电刺激对光的补充反而降低了增益性能。我们发现,在不变的亚阈值光激发下,在 CsPbBr 钙钛矿发光二极管(LED)中放大的自发辐射(ASE)可以通过外加/去除电场来开启/关闭。正偏压会使光学 ASE 阈值降低 3 倍,其原因可以归因于辐射率的增强。当电压改变时,光致发光和 ASE 的调制的慢分量(10 s 时间尺度)表明,可移动离子的重新定位触发了增加的辐射率和观察到的 ASE 阈值降低。