Shi Li, Lv Chunyan, Wei Haoran, Xu Wangping, Wang Rui, Fan Jing, Wu Xiaozhi
Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 401331, P. R. China.
Department of Materials Chemistry, Huzhou University, Huzhou 313000, P. R. China.
Phys Chem Chem Phys. 2023 Apr 12;25(15):10335-10342. doi: 10.1039/d3cp00594a.
Recently, two-dimensional (2D) layered polarized ZnInS nanosheets have been successfully synthesized in experiments. However, the polarized monolayers are unstable in air, which hinders their practical applications. Therefore, in this work, we proposed a new family of nonpolarized monolayers (β-phase) ZnXZ (X = In, Al, and Ga; Z = S, Se, and Te) by first-principles. It is confirmed that the energies of β-phase ZnXZ are lower than those of the polarized and β-phase ZnXZ monolayers. Moreover, these ZnXZ monolayers have not only desirable indirect band gaps but also high electron mobility (up to 10 cm V s), revealing a fascinating visible light absorption range. Furthermore, β-phase ZnXTe (X = In, Al, and Ga) has ultra-low lattice thermal conductivity and high value (up to 0.89), suggesting that these monolayers can be good candidates for thermoelectric materials. These new 2D ternary monolayers not only effectively broaden the family of 2D materials but also provide promising candidates for optoelectronic and thermoelectric materials.
最近,二维(2D)层状极化ZnInS纳米片已在实验中成功合成。然而,极化单分子层在空气中不稳定,这阻碍了它们的实际应用。因此,在这项工作中,我们通过第一性原理提出了一族新的非极化单分子层(β相)ZnXZ(X = In、Al和Ga;Z = S、Se和Te)。已证实β相ZnXZ的能量低于极化和β相ZnXZ单分子层的能量。此外,这些ZnXZ单分子层不仅具有理想的间接带隙,而且具有高电子迁移率(高达10 cm² V⁻¹ s⁻¹),展现出迷人的可见光吸收范围。此外,β相ZnXTe(X = In、Al和Ga)具有超低的晶格热导率和高优值(高达0.89),表明这些单分子层可成为热电材料的良好候选者。这些新型二维三元单分子层不仅有效地拓宽了二维材料家族,而且为光电子和热电材料提供了有前景的候选材料。