Micro- and Nanoelectronics Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Highway 31, 115409 Moscow, Russia.
Engineering Center of Microtechnology and Diagnostics, St. Petersburg Electrotechnical University (ETU «LETI»), Professora Popova str. 5, 197022 St. Petersburg, Russia.
Sensors (Basel). 2023 Apr 5;23(7):3760. doi: 10.3390/s23073760.
The features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors' structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals' optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/TaO/SiC/4H-SiC structures and two types of gas-sensitive electrodes were made: Palladium and Platinum. The effectiveness of using Platinum as an alternative to Palladium in the MOSFE-Capacitor (MOSFEC) gas sensors' high-temperature design is evaluated. It is shown that, compared with Silicon, the use of Silicon Carbide increases the response rate, while maintaining the sensors' high hydrogen sensitivity. The operating temperature and test signal frequency influence for measuring the sensor's capacitance on the sensitivity to H have been studied.
研究了宽禁带 SiC 半导体在电容式 MOSFE 传感器结构中用于氢气敏感效应、响应速度和测量信号最佳参数的特点。在具有 Me/TaO/SiC/4H-SiC 结构和两种类型的气体敏感电极的高温陶瓷外壳中制造了传感器：钯和铂。评估了在 MOSFE 电容器 (MOSFEC) 气体传感器的高温设计中使用铂替代钯的效果。结果表明，与硅相比，碳化硅的使用提高了响应速度，同时保持了传感器对氢气的高灵敏度。研究了工作温度和测试信号频率对传感器电容测量灵敏度的影响。
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