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在晶体金表面上由有序的10,10'-二溴-9,9'-联蒽单层合成长且取向的石墨烯纳米带

Long and oriented graphene nanoribbon synthesis from well-ordered 10,10'-dibromo-9,9'-bianthracene monolayer on crystalline Au surfaces.

作者信息

Yano Masahiro, Yasuda Satoshi, Fukutani Katsuyuki, Asaoka Hidehito

机构信息

Research Group for Surface and Interface Science, Advanced Science Research Center, Japan Atomic Energy Agency 2-4 Shirakata Tokai Ibaraki 319-1195 Japan

Institute of Industrial Science, The University of Tokyo 4-6-1 Komaba, Meguro-ku Tokyo 153-8505 Japan.

出版信息

RSC Adv. 2023 May 9;13(21):14089-14096. doi: 10.1039/d2ra07570a.

Abstract

Bottom-up synthesis on metal surfaces has attracted attention for the fabrication of graphene nanoribbons (GNRs) with atomically-precise chemical structures to realize novel electronic devices. However, control of length and orientation on surfaces during GNR synthesis is difficult, thus, achieving longer and aligned GNR growth is a significant challenge. Herein, we report GNR synthesis from a well-ordered dense monolayer on Au crystalline surfaces for long and oriented GNR growth. Scanning tunneling microscopy showed that 10,10'-dibromo-9,9'-bianthracene (DBBA) precursors deposited on Au(111) at room temperature self-assembled into a well-ordered dense monolayer, and the straight molecular wire structure was formed where Br atoms in each precursor were adjacent along the wire axis. The DBBAs in the monolayer were found to be hardly desorbed from the surface under subsequent heating and efficiently polymerize along with the molecular arrangement, resulting in more long and oriented GNR growth compared to the conventional growth method. The result is attributed to be suppression of random diffusion and desorption of the DBBAs on the Au surface during polymerization due to the densely-packed DBBA structure. Additionally, an investigation of the effect of the Au crystalline plane on the GNR growth revealed further anisotropic GNR growth on Au(100) compared to Au(111) due to the stronger interactions of DBBA with Au(100). These findings provide fundamental knowledge for controlling GNR growth from a well-ordered precursor monolayer to achieve more long and oriented GNRs.

摘要

在金属表面进行自下而上的合成,因其能够制备具有原子精确化学结构的石墨烯纳米带(GNRs)以实现新型电子器件而备受关注。然而,在GNR合成过程中控制其在表面的长度和取向较为困难,因此,实现更长且排列整齐的GNR生长是一项重大挑战。在此,我们报道了在金晶体表面从有序致密单分子层合成GNR以实现长且取向的GNR生长。扫描隧道显微镜显示,室温下沉积在Au(111)上的10,10'-二溴-9,9'-联蒽(DBBA)前驱体自组装成有序致密单分子层,并且形成了直的分子线结构,其中每个前驱体中的Br原子沿分子线轴相邻。发现单分子层中的DBBA在随后的加热过程中几乎不从表面解吸,并且与分子排列一起有效地聚合,与传统生长方法相比,导致更多长且取向的GNR生长。该结果归因于在聚合过程中,由于DBBA结构的紧密堆积,抑制了DBBA在金表面的随机扩散和解吸。此外,对金晶面对GNR生长影响的研究表明,由于DBBA与Au(100)之间更强的相互作用,与Au(111)相比,在Au(100)上GNR生长具有进一步的各向异性。这些发现为从有序前驱体单分子层控制GNR生长以获得更长且取向的GNR提供了基础知识。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1635/10167794/61c3d06b3e62/d2ra07570a-f1.jpg

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