Buryakov Arseniy, Avdeev Pavel, Khusyainov Dinar, Bezvikonnyy Nikita, Coclet Andreas, Klimov Alexey, Tiercelin Nicolas, Lavrov Sergey, Preobrazhensky Vladimir
Department of Nanoelectronics, MIREA-Russian Technological University, 78 Vernadsky Avenue, 119454 Moscow, Russia.
Institute for Molecules and Materials, Radboud University, 6525 AJ Nijmegen, The Netherlands.
Nanomaterials (Basel). 2023 May 23;13(11):1710. doi: 10.3390/nano13111710.
In this article, we investigate optically induced terahertz radiation in ferromagnetic FeCo layers of varying thickness on Si and SiO substrates. Efforts have been made to account for the influence of the substrate on the parameters of the THz radiation generated by the ferromagnetic FeCo film. The study reveals that the thickness of the ferromagnetic layer and the material of the substrate significantly affect the generation efficiency and spectral characteristics of the THz radiation. Our results also emphasize the importance of accounting for the reflection and transmission coefficients of the THz radiation when analyzing the generation process. The observed radiation features correlate with the magneto-dipole mechanism, triggered by the ultrafast demagnetization of the ferromagnetic material. This research contributes to a better understanding of THz radiation generation mechanisms in ferromagnetic films and may be useful for the further development of THz technology applications in the field of spintronics and other related areas. A key discovery of our study is the identification of a nonmonotonic relationship between the radiation amplitude and pump intensity for thin films on semiconductor substrates. This finding is particularly significant considering that thin films are predominantly used in spintronic emitters due to the characteristic absorption of THz radiation in metals.
在本文中,我们研究了在硅(Si)和二氧化硅(SiO)衬底上不同厚度的铁磁体FeCo层中的光致太赫兹辐射。我们已努力考虑衬底对铁磁体FeCo薄膜产生的太赫兹辐射参数的影响。研究表明,铁磁层的厚度和衬底材料会显著影响太赫兹辐射的产生效率和光谱特性。我们的结果还强调了在分析产生过程时考虑太赫兹辐射的反射和透射系数的重要性。观察到的辐射特征与由铁磁材料的超快退磁触发的磁偶极子机制相关。这项研究有助于更好地理解铁磁薄膜中的太赫兹辐射产生机制,并且可能对自旋电子学及其他相关领域中太赫兹技术应用的进一步发展有用。我们研究的一个关键发现是确定了半导体衬底上薄膜的辐射幅度与泵浦强度之间的非单调关系。考虑到由于太赫兹辐射在金属中的特征吸收,薄膜主要用于自旋电子发射器,这一发现尤为重要。