一款采用0.15μm砷化镓pHEMT的Ku波段宽带堆叠式场效应管功率放大器。

A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT.

作者信息

Li Jiaxuan, Yuan Yang, Yuan Bin, Fan Jingxin, Zeng Jialong, Yu Zhongjun

机构信息

Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, China.

School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 101408, China.

出版信息

Micromachines (Basel). 2023 Jun 20;14(6):1276. doi: 10.3390/mi14061276.

DOI:10.3390/mi14061276

PMID:37374861

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10305170/

Abstract

To meet the application requirements of broadband radar systems for broadband power amplifiers, a Ku-band broadband power amplifier (PA) microwave monolithic integrated circuit (MMIC) based on a 0.15 µm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) technology is proposed in this paper. In this design, the advantages of the stacked FET structure in the broadband PA design are illustrated by theoretical derivation. The proposed PA uses a two-stage amplifier structure and a two-way power synthesis structure to achieve high-power gain and high-power design, respectively. The fabricated power amplifier was tested under continuous wave conditions, and the test results showed a peak power of 30.8 dBm at 16 GHz. At 15 to 17.5 GHz, the output power was above 30 dBm with a PAE of more than 32%. The fractional bandwidth of the 3 dB output power was 30%. The chip area was 3.3 × 1.2 mm and included input and output test pads.

摘要

为满足宽带雷达系统对宽带功率放大器的应用需求，本文提出了一种基于0.15μm砷化镓（GaAs）高电子迁移率晶体管（HEMT）技术的Ku波段宽带功率放大器（PA）微波单片集成电路（MMIC）。在该设计中，通过理论推导阐述了堆叠式场效应晶体管结构在宽带功率放大器设计中的优势。所提出的功率放大器采用两级放大器结构和双向功率合成结构，分别实现高功率增益和高功率设计。对制作完成的功率放大器在连续波条件下进行了测试，测试结果表明在16GHz时峰值功率为30.8dBm。在15至17.5GHz频段，输出功率高于30dBm，功率附加效率（PAE）超过32%。3dB输出功率的分数带宽为30%。芯片面积为3.3×1.2mm，包括输入和输出测试焊盘。