Ghosh Sujoy, Zhang Jie, Wasala Milinda, Patil Prasanna, Pradhan Nihar, Talapatra Saikat
School of Physics and Applied Physics, Southern Illinois University, Carbondale, IL 62901, USA.
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA.
Nanomaterials (Basel). 2023 Aug 14;13(16):2333. doi: 10.3390/nano13162333.
Transition metal dichalcogenides (TMDs)-based field-effect transistors (FETs) are being investigated vigorously for their promising applications in optoelectronics. Despite the high optical response reported in the literature, most of them are studied at room temperature. To extend the application of these materials in a photodetector, particularly at a low temperature, detailed understanding of the photo response behavior of these materials at low temperatures is crucial. Here we present a systematic investigation of temperature-dependent electronic and optoelectronic properties of few-layers MoS FETs, synthesized using the mechanical exfoliation of bulk MoS crystal, on the Si/SiO substrate. Our MoS FET show a room-temperature field-effect mobility μ ~40 cm·V·s, which increases with decreasing temperature, stabilizing at 80 cm·V·s below 100 K. The temperature-dependent (50 K < T < 300 K) photoconductivity measurements were investigated using a continuous laser source λ = 658 nm (E = 1.88 eV) over a broad range of effective illuminating laser intensity, P (0.02 μW < P < 0.6 μW). Photoconductivity measurements indicate a fractional power dependence of the steady-state photocurrent. The room-temperature photoresponsivity (R) obtained in these samples was found to be ~2 AW, and it increases as a function of decreasing temperature, reaching a maximum at T = 75 K. The optoelectronic properties of MoS at a low temperature give an insight into photocurrent generation mechanisms, which will help in altering/improving the performance of TMD-based devices for various applications.
基于过渡金属二硫属化物（TMDs）的场效应晶体管（FETs）因其在光电子学领域的潜在应用而受到广泛研究。尽管文献报道了其具有较高的光学响应，但大多数研究是在室温下进行的。为了扩展这些材料在光电探测器中的应用，特别是在低温下的应用，深入了解这些材料在低温下的光响应行为至关重要。在此，我们对通过机械剥离块状MoS晶体在Si/SiO衬底上合成的少层MoS FET的温度相关电子和光电特性进行了系统研究。我们的MoS FET在室温下的场效应迁移率μ约为40 cm²·V⁻¹·s⁻¹，该值随温度降低而增加，在100 K以下稳定在80 cm²·V⁻¹·s⁻¹。使用连续激光源λ = 658 nm（E = 1.88 eV）在宽范围的有效照明激光强度P（0.02 μW < P < 0.6 μW）下研究了温度相关（50 K < T < 300 K）的光电导测量。光电导测量表明稳态光电流与功率呈分数依赖关系。在这些样品中获得的室温光响应度（R）约为2 A/W，并且它随温度降低而增加，在T = 75 K时达到最大值。MoS在低温下的光电特性有助于深入了解光电流产生机制，这将有助于改变/改善基于TMD的器件在各种应用中的性能。
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