Yu Jun, Wang Han, Zhuge Fuwei, Chen Zirui, Hu Man, Xu Xiang, He Yuhui, Ma Ying, Miao Xiangshui, Zhai Tianyou
State Key Laboratory of Materials Processing and Die and Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
Hubei Yangtze Memory Laboratory; School of Integrated circuits, Huazhong University of Science and Technology, Wuhan, 430074, China.
Nat Commun. 2023 Sep 13;14(1):5662. doi: 10.1038/s41467-023-41363-x.
As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the 'speed-retention-endurance' dilemma, their typical speed is limited to ~microseconds to milliseconds for program and erase operations, restricting their application in scenarios with high-speed data throughput. Here, by adopting metallic 1T-LiMoS as edge contact, we show that ultrafast (10-100 ns) and robust (endurance>10 cycles, retention>10 years) memory operation can be simultaneously achieved in a two-dimensional van der Waals heterostructure flash memory with 2H-MoS as semiconductor channel. We attribute the superior performance to the gate tunable Schottky barrier at the edge contact, which can facilitate hot carrier injection to the semiconductor channel and subsequent tunneling when compared to a conventional top contact with high density of defects at the metal interface. Our results suggest that contact engineering can become a strategy to further improve the performance of 2D flash memory devices and meet the increasing demands of high speed and reliable data storage.
作为主流的非易失性存储器（NVM），闪存以高集成密度和低成本提供海量数据存储。然而，由于“速度-保持-耐久性”困境，其典型的编程和擦除操作速度限制在微秒至毫秒级别，这限制了它们在高速数据吞吐量场景中的应用。在此，通过采用金属1T-LiMoS作为边缘接触，我们表明，在以2H-MoS为半导体沟道的二维范德华异质结构闪存中，可以同时实现超快（10-100纳秒）和稳健（耐久性>10次循环，保持时间>10年）的存储器操作。我们将这种优异性能归因于边缘接触处的栅极可调肖特基势垒，与在金属界面处具有高密度缺陷的传统顶部接触相比，该势垒可以促进热载流子注入到半导体沟道并随后进行隧穿。我们的结果表明，接触工程可以成为进一步提高二维闪存器件性能并满足高速和可靠数据存储不断增长需求的一种策略。
