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用于氮化硅光子学的C波段和O波段双偏振光纤到芯片光栅耦合器

C- and O-Band Dual-Polarization Fiber-to-Chip Grating Couplers for Silicon Nitride Photonics.

作者信息

Kohli Manuel, Chelladurai Daniel, Vukovic Boris, Moor David, Bisang Dominik, Keller Killian, Messner Andreas, Buriakova Tatiana, Zervas Michael, Fedoryshyn Yuriy, Koch Ueli, Leuthold Juerg

机构信息

ETH Zurich, Institute of Electromagnetic Fields (IEF), 8092 Zürich, Switzerland.

Ligentec SA, 1024 Ecublens, Switzerland.

出版信息

ACS Photonics. 2023 Aug 30;10(9):3366-3373. doi: 10.1021/acsphotonics.3c00834. eCollection 2023 Sep 20.

Abstract

Highly efficient coupling of light from an optical fiber to silicon nitride (SiN) photonic integrated circuits (PICs) is experimentally demonstrated with simple and fabrication-tolerant grating couplers (GC). Fully etched amorphous silicon gratings are formed on top of foundry-produced SiN PICs in a back-end-of-the-line (BEOL) process, which is compatible with 248 nm deep UV lithography. Metallic back reflectors are introduced to enhance the coupling efficiency (CE) from -1.11 to -0.44 dB in simulation and from -2.2 to -1.4 dB in experiments for the TE polarization in the C-band. Furthermore, these gratings can be optimized to couple both TE and TM polarizations with a CE below -3 dB and polarization-dependent losses under 1 dB over a wavelength range of 40 nm in the O-band. This elegant approach offers a simple solution for the realization of compact and, at the same time, highly efficient coupling schemes in SiN PICs.

摘要

利用简单且对制造工艺宽容的光栅耦合器(GC),通过实验证明了从光纤到氮化硅(SiN)光子集成电路(PIC)的高效光耦合。在后端制程(BEOL)中,在代工生产的SiN PIC顶部形成完全蚀刻的非晶硅光栅,该制程与248 nm深紫外光刻兼容。引入金属背反射器以提高耦合效率(CE),在模拟中,C波段TE偏振的耦合效率从-1.11 dB提高到-0.44 dB,在实验中从-2.2 dB提高到-1.4 dB。此外,这些光栅可以进行优化,以在O波段40 nm的波长范围内耦合TE和TM偏振,耦合效率低于-3 dB,偏振相关损耗低于1 dB。这种巧妙的方法为在SiN PIC中实现紧凑且高效的耦合方案提供了一种简单的解决方案。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/e4af/10515627/edd1184978a3/ph3c00834_0001.jpg

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