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外延硼烯中的单向纳米调制结合与电子散射

Unidirectional Nano-modulated Binding and Electron Scattering in Epitaxial Borophene.

作者信息

Kamal Sherif, Seo Insung, Bampoulis Pantelis, Jugovac Matteo, Brondin Carlo Alberto, Menteş Tevfik Onur, Šarić Janković Iva, Matetskiy Andrey V, Moras Paolo, Sheverdyaeva Polina M, Michely Thomas, Locatelli Andrea, Gohda Yoshihiro, Kralj Marko, Petrović Marin

机构信息

Centre for Advanced Laser Techniques, Institute of Physics, 10000 Zagreb, Croatia.

Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan.

出版信息

ACS Appl Mater Interfaces. 2023 Dec 2. doi: 10.1021/acsami.3c14884.

Abstract

A complex interplay between the crystal structure and the electron behavior within borophene renders this material an intriguing 2D system, with many of its electronic properties still undiscovered. Experimental insight into those properties is additionally hampered by the limited capabilities of the established synthesis methods, which, in turn, inhibits the realization of potential borophene applications. In this multimethod study, photoemission spectroscopies and scanning probe techniques complemented by theoretical calculations have been used to investigate the electronic characteristics of a high-coverage, single-layer borophene on the Ir(111) substrate. Our results show that the binding of borophene to Ir(111) exhibits pronounced one-dimensional modulation and transforms borophene into a nanograting. The scattering of photoelectrons from this structural grating gives rise to the replication of the electronic bands. In addition, the binding modulation is reflected in the chemical reactivity of borophene and gives rise to its inhomogeneous aging effect. Such aging is easily reset by dissolving boron atoms in iridium at high temperature, followed by their reassembly into a fresh atomically thin borophene mesh. Besides proving electron-grating capabilities of the boron monolayer, our data provide comprehensive insight into the electronic properties of epitaxial borophene which is vital for further examination of other boron systems of reduced dimensionality.

摘要

硼烯的晶体结构与电子行为之间存在复杂的相互作用,使得这种材料成为一个引人入胜的二维体系,其许多电子特性仍未被发现。已有的合成方法能力有限,这进一步阻碍了对这些特性的实验性洞察,进而抑制了硼烯潜在应用的实现。在这项多方法研究中,光电子能谱和扫描探针技术辅以理论计算,被用于研究在Ir(111)衬底上高覆盖度单层硼烯的电子特性。我们的结果表明,硼烯与Ir(111)的结合呈现出明显的一维调制,并将硼烯转变为一个纳米光栅。来自这种结构光栅的光电子散射导致了电子能带的复制。此外,结合调制反映在硼烯的化学反应性上,并导致其不均匀老化效应。通过在高温下将硼原子溶解在铱中,然后将它们重新组装成一个新的原子级薄硼烯网格,这种老化很容易重置。除了证明硼单层的电子光栅能力外,我们的数据还提供了对外延硼烯电子特性的全面洞察,这对于进一步研究其他低维硼体系至关重要。

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