DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby, Denmark.
NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Kongens Lyngby, Denmark.
Nature. 2023 Dec;624(7990):57-63. doi: 10.1038/s41586-023-06736-8. Epub 2023 Dec 6.
Despite tremendous progress in research on self-assembled nanotechnological building blocks, such as macromolecules, nanowires and two-dimensional materials, synthetic self-assembly methods that bridge the nanoscopic to macroscopic dimensions remain unscalable and inferior to biological self-assembly. By contrast, planar semiconductor technology has had an immense technological impact, owing to its inherent scalability, yet it seems unable to reach the atomic dimensions enabled by self-assembly. Here, we use surface forces, including Casimir-van der Waals interactions, to deterministically self-assemble and self-align suspended silicon nanostructures with void features well below the length scales possible with conventional lithography and etching, despite using only conventional lithography and etching. The method is remarkably robust and the threshold for self-assembly depends monotonically on all the governing parameters across thousands of measured devices. We illustrate the potential of these concepts by fabricating nanostructures that are impossible to make with any other known method: waveguide-coupled high-Q silicon photonic cavities that confine telecom photons to 2 nm air gaps with an aspect ratio of 100, corresponding to mode volumes more than 100 times below the diffraction limit. Scanning transmission electron microscopy measurements confirm the ability to build devices with sub-nanometre dimensions. Our work constitutes the first steps towards a new generation of fabrication technology that combines the atomic dimensions enabled by self-assembly with the scalability of planar semiconductors.
尽管在自组装纳米技术构建块(如大分子、纳米线和二维材料)的研究方面取得了巨大进展,但将纳米级到宏观级尺寸连接起来的合成自组装方法仍然不可扩展,并且不如生物自组装。相比之下,平面半导体技术具有巨大的技术影响力,因为它具有内在的可扩展性,但它似乎无法达到自组装所实现的原子尺寸。在这里,我们使用表面力(包括 Casimir-van der Waals 相互作用)来确定性地自组装和自对准悬浮的硅纳米结构,这些结构具有低于传统光刻和刻蚀可能的长度尺度的空隙特征,尽管仅使用传统光刻和刻蚀。该方法非常稳健,自组装的阈值单调地取决于数千个测量设备中的所有控制参数。我们通过制造任何其他已知方法都不可能制造的纳米结构来证明这些概念的潜力:波导耦合的高 Q 硅光子腔,将电信光子限制在具有 100 纵横比的 2nm 气隙中,对应于低于衍射极限 100 多倍的模式体积。扫描透射电子显微镜测量证实了构建具有亚纳米尺寸器件的能力。我们的工作标志着迈向新一代制造技术的第一步,该技术将自组装所实现的原子尺寸与平面半导体的可扩展性结合在一起。