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铌酸锂薄膜马赫-曾德尔调制器行波电极的等效电路模型

Equivalent circuit model of the traveling wave electrode for lithium niobate thin film Mach-Zehnder modulators.

作者信息

Guo Yanting, Li Lianyan, Zhang Yunshan, Sun Shiyuan, Quan Qihong, Shi Yuechun

出版信息

Appl Opt. 2024 Jan 20;63(3):617-623. doi: 10.1364/AO.509361.

Abstract

We propose an equivalent circuit model of the traveling wave electrode for lithium niobate thin film (TFLN) Mach-Zehnder modulators, in which the distributed capacitance and conformal mapping techniques are applied to calculate the microwave refractive index, microwave loss, and characteristic impedance. Their accuracies are verified by comparing with the results of the finite element method, and the relative errors are less than 3.282%, 1.776%, and 5.334%, respectively. The influence of the electrode's structural parameters on the modulation performances is analyzed, and a 3 dB modulation bandwidth around 84 GHz with an 8-mm-long traveling wave electrode is obtained.

摘要

我们提出了一种用于铌酸锂薄膜(TFLN)马赫曾德尔调制器的行波电极等效电路模型,其中应用分布电容和保角映射技术来计算微波折射率、微波损耗和特性阻抗。通过与有限元方法的结果进行比较,验证了它们的准确性,相对误差分别小于3.282%、1.776%和5.334%。分析了电极结构参数对调制性能的影响,并获得了一个8毫米长的行波电极在84吉赫兹左右的3分贝调制带宽。

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