Liu Zhaobin, Guo Chunlin, Liu Ya, Wang Jianhua, Su Xuping, Wang Qinqin
School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China.
Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou 213164, China.
Materials (Basel). 2024 Feb 9;17(4):849. doi: 10.3390/ma17040849.
Selective emitter (SE) technology significantly influences the passivation and contact properties of n-TOPCon solar cells. In this study, three mask layers (SiO, SiN, and SiON) were employed to fabricate n-TOPCon solar cells with phosphorus (P)-SE structures on the rear side using a three-step method. Additionally, phosphosilicon glass (PSG) was used to prepare n-TOPCon solar cells with P-SE structure on the rear side using four-step method, and the comparative analysis of electrical properties were studied. The SiO mask with a laser power of 20 W (O2 group) achieved the highest solar cell efficiency (, 24.85%), The open-circuit voltage () is 2.4 mV higher than that of the H1 group, and the fill factor () is 1.88% higher than that of the L1 group. Furthermore, the final of solar cell is 0.17% higher than that of the L1 group and 0.20% higher than that of the H1 group. In contrast, using the four-step method and a laser power of 20 W (P2 group), a maximum of 24.82% was achieved. Moreover, it exhibited an , which is elevated by 3.2 mV compared to the H1 group, and increased by 1.49% compared to the L1 group. Furthermore, the overall of the P2 group outperforms both the L1 and H1 groups by approximately 0.14% and 0.17%, respectively. In the four-step groups, the of each laser condition group was improved compared with the L1 group and H1 group, The stability observed within the four-step method surpassed that of the three-step groups. However, in terms of full-scale electrical properties, the three-step method can achieve comparable results as those obtained from the four-step method. This research holds significant guiding implications for upgrading the n-TOPCon solar cell rear-side technology during mass production.
选择性发射极（SE）技术对n型隧穿氧化层钝化接触（TOPCon）太阳能电池的钝化和接触特性有显著影响。在本研究中，采用三层掩膜层（SiO、SiN和SiON），通过三步法在背面制备具有磷（P）-SE结构的n型TOPCon太阳能电池。此外，使用磷硅玻璃（PSG），通过四步法在背面制备具有P-SE结构的n型TOPCon太阳能电池，并对其电学性能进行了对比分析。激光功率为20 W的SiO掩膜（O2组）实现了最高的太阳能电池效率（，24.85%），开路电压（）比H1组高2.4 mV，填充因子（）比L1组高1.88%。此外，太阳能电池的最终效率比L1组高0.17%，比H1组高0.20%。相比之下，采用四步法和20 W激光功率（P2组），实现了最高24.82%的效率。此外，其开路电压比H1组提高了3.2 mV，填充因子比L1组提高了1.49%。此外，P2组的整体效率分别比L1组和H1组高出约0.14%和0.17%。在四步法组中，各激光条件组的效率均比L1组和H1组有所提高，四步法观察到的稳定性超过了三步法组。然而，就全面的电学性能而言，三步法可获得与四步法相当的结果。本研究对大规模生产中升级n型TOPCon太阳能电池背面技术具有重要的指导意义。
