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基于镀铋金的微电极阵列采用阳极溶出伏安法测定铊(I)的方法

Anodic Stripping Voltammetric Procedure of Thallium(I) Determination by Means of a Bismuth-Plated Gold-Based Microelectrode Array.

作者信息

Korolczuk Mieczyslaw, Ochab Mateusz, Gęca Iwona

机构信息

Institute of Chemical Sciences, Faculty of Chemistry, Maria Curie Sklodowska University, 20-031 Lublin, Poland.

出版信息

Sensors (Basel). 2024 Feb 13;24(4):1206. doi: 10.3390/s24041206.

Abstract

This article presents a new working electrode based on a bismuth-plated, gold-based microelectrode array, which is suitable for determining thallium(I) species using anodic stripping voltammetry (ASV). It allowed a significant increase in the sensitivity as compared to other voltammetric sensors. The main experimental conditions and the instrumental parameters were optimized. A very good proportionality between the Tl(I) peak current and its concentration was evidenced in the range from 5 × 10 up to 5 × 10 mol L (R = 0.9989) for 120 s of deposition and from 2 × 10 up to 2 × 10 mol L (R = 0.9988) for 180 s. A limit of detection (LOD) of 8 × 10 mol L for a deposition time of 180 s was calculated. The effects of interfering ions on the Tl(I) analytical signal were studied. The proposed method was applied for quantitative Tl(I) detection in water certified reference material TM 25.5 as well as in spiked real water samples, for which satisfactory recovery values between 98.7 and 101.8% were determined.

摘要

本文介绍了一种基于镀铋金基微电极阵列的新型工作电极,该电极适用于采用阳极溶出伏安法(ASV)测定铊(I)物种。与其他伏安传感器相比,它显著提高了灵敏度。优化了主要实验条件和仪器参数。在沉积120秒时,铊(I)的峰电流与其浓度在5×10至5×10摩尔/升范围内呈现出非常好的比例关系(R = 0.9989);在沉积180秒时,在2×10至2×10摩尔/升范围内(R = 0.9988)也呈现出良好比例关系。计算得出沉积时间为180秒时的检测限(LOD)为8×10摩尔/升。研究了干扰离子对铊(I)分析信号的影响。所提出的方法应用于水标准参考物质TM 25.5以及加标实际水样中的铊(I)定量检测,测定的回收率在98.7%至101.8%之间,结果令人满意。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5cee/10892365/fbf1001cbf76/sensors-24-01206-g001.jpg

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