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基于可逆金属电沉积的可调谐微波吸收器件

Tunable Microwave Absorbing Devices Enabled by Reversible Metal Electrodeposition.

作者信息

Meng Zhen, Liu Dongqing, Xing Shiqi, Pang Yongqiang, Jia Yan, Li Mingyang, Zu Mei, Wang Zi, Liu Tianwen, Cheng Haifeng

机构信息

Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, China.

State Key Laboratory of Complex Electromagnetic Environment Effects on Electronics and Information System, College of Electronic Science and Technology, National University of Defense Technology, Changsha 410073, China.

出版信息

ACS Appl Mater Interfaces. 2024 Mar 6;16(9):11686-11693. doi: 10.1021/acsami.3c18347. Epub 2024 Feb 26.

Abstract

Tunable microwave absorbers have gained significant interest due to their capability to actively control microwaves. However, the existing architecture-change-based approach lacks flexibility, and the active-element-based approach is constrained by a narrowband operation or small dynamic modulation range. Here, a novel electrically tunable microwave absorbing device (TMAD) is demonstrated that can achieve dynamic tuning of the average reflection amplitude between -13.0 and -1.2 dB over a broadband range of 8-18 GHz enabled by reversible metal electrodeposition. This reversible tunability is achieved by electrodepositing silver (Ag) layers with controlled morphology on nanoscopic platinum (Pt) films in a device structure similar to a tunable Salisbury screen, employing Ag electrodeposited on Pt films as the modifiable resistive layer. Furthermore, this TMAD possesses a simple device architecture, excellent bistability, and multispectral compatibility. Our approach offers a new strategy for dynamically manipulating microwaves, which has potential utility in intelligent camouflage and communication systems.

摘要

可调谐微波吸收器因其能够主动控制微波而备受关注。然而,现有的基于架构变化的方法缺乏灵活性,而基于有源元件的方法则受到窄带操作或小动态调制范围的限制。在此,展示了一种新型电可调谐微波吸收器件(TMAD),通过可逆金属电沉积,它能够在8-18 GHz的宽带范围内实现平均反射幅度在-13.0 dB至-1.2 dB之间的动态调谐。这种可逆可调性是通过在类似于可调谐萨利斯伯里屏的器件结构中,在纳米级铂(Pt)薄膜上电沉积具有可控形态的银(Ag)层来实现的,将沉积在Pt薄膜上的Ag用作可改性电阻层。此外,该TMAD具有简单的器件架构、出色的双稳态和多光谱兼容性。我们的方法为动态操纵微波提供了一种新策略,在智能伪装和通信系统中具有潜在应用价值。

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