Jin Cui, Tang Xiao, Sun Qilong, Mu Chenxi, Krasheninnikov Arkady V, Kou Liangzhi
School of Science, Shandong Jianzhu University, Jinan 250101, China.
College of Science, Nanjing Forestry University, Nanjing 210037, China.
J Phys Chem Lett. 2024 Mar 14;15(10):2650-2657. doi: 10.1021/acs.jpclett.4c00029. Epub 2024 Feb 29.
Magnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO monolayer with the ferroelectric (FE) GaO. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the GaO monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.
磁电耦合是下一代电子学的一项重大突破，它能够通过电手段实现非易失性磁控制。在这项全面的研究中，我们利用第一性原理计算，通过巧妙地将非范德华（non-vdW）磁性FeTiO单层与铁电（FE）GaO整合，揭示了多铁异质结构（HSs）中强大的磁电耦合。与传统的范德华（vdW）多铁HSs不同，通过反转GaO单层的极化，FeTiO单层的磁态可以在铁磁（FM）和反铁磁（AFM）构型之间有效切换。这种有趣的现象源于极化依赖的大量层间电子转移以及铁原子的超交换和直接交换磁耦合之间的相互作用。载流子介导的界面相互作用导致费米能级位置发生关键变化，决定性地赋予复合系统费米能级附近独特的电子特性。这些新发现为磁电技术的未来提供了令人兴奋的前景。
