Gibson Quinn D, Wen Dongsheng, Lin Hai, Zanella Marco, Daniels Luke M, Robertson Craig M, Claridge John B, Alaria Jonathan, Dyer Matthew S, Rosseinsky Matthew J
Department of Chemistry, University of Liverpool, Crown Street, Liverpool, L69 7ZD, United Kingdom.
Present Address for Quinn D. Gibson, Aberdeen Centre for Energy and Sustainability, Department of Chemistry, University of Aberdeen, Aberdeen, AB24, 3FX, United Kingdom.
Angew Chem Int Ed Engl. 2024 Jun 3;63(23):e202403670. doi: 10.1002/anie.202403670. Epub 2024 Apr 3.
A 2×2×1 superstructure of the P6/mmc NiAs structure is reported in which kagome nets are stabilized in the octahedral transition metal layers of the compounds NiPdBi, NiPtBi, and MnPdBi. The ordered vacancies that yield the true hexagonal kagome motif lead to filling of trigonal bipyramidal interstitial sites with the transition metal in this family of "kagome-NiAs" type materials. Further ordering of vacancies within these interstitial layers can be compositionally driven to simultaneously yield kagome-connected layers and a net polarization along the c axes in NiBi and NiPdBi, which adopt Fmm2 symmetry. The polar and non-polar materials exhibit different electronic transport behaviour, reflecting the tuneability of both structure and properties within the NiAs-type bismuthide materials family.
报道了一种P6/mmc NiAs结构的2×2×1超结构,其中在化合物NiPdBi、NiPtBi和MnPdBi的八面体过渡金属层中,戈薇网得以稳定。在这类“戈薇-NiAs”型材料中,产生真正六边形戈薇图案的有序空位导致三角双锥间隙位置被过渡金属填充。这些间隙层内空位的进一步有序排列可由成分驱动,从而在具有Fmm2对称性的NiBi和NiPdBi中同时产生戈薇连接层和沿c轴的净极化。极性和非极性材料表现出不同的电子传输行为,这反映了NiAs型铋化物材料家族中结构和性能的可调节性。