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高质量超薄铁电氧化钼镁的可扩展合成

Scalable Synthesis of High-Quality Ultrathin Ferroelectric Magnesium Molybdenum Oxide.

作者信息

Zhang Xingxing, Cheng Mo, Dai Jiuxiang, Yang Qianqian, Zhang Ye, Dong Baojuan, Tao Xinwei, Zou Jingyi, Jin Zhitong, Liu Feng, Wu Zhenghan, Hu Xianyu, Zheng Zemin, Shi Zhiwen, Jiang Shengwei, Zhang Linxing, Yang Teng, Zhang Xu, Zhou Lin

机构信息

School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China.

Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, China.

出版信息

Adv Mater. 2024 Jun;36(24):e2308550. doi: 10.1002/adma.202308550. Epub 2024 Mar 19.

Abstract

The development of ultrathin, stable ferroelectric materials is crucial for advancing high-density, low-power electronic devices. Nonetheless, ultrathin ferroelectric materials are rare due to the critical size effect. Here, a novel ferroelectric material, magnesium molybdenum oxide (MgMoO) is presented. High-quality ultrathin MgMoO crystals are synthesized using chemical vapor deposition (CVD). Ultrathin MgMoO has a wide bandgap (≈4.4 eV) and nonlinear optical response. MgMoO crystals of varying thicknesses exhibit out-of-plane ferroelectric properties at room temperature, with ferroelectricity retained even at a 2 nm thickness. The MgMoO exhibits a relatively large remanent polarization ranging from 33 to 52 µC cm , which is tunable by changing its thickness. Notably, MgMoO possesses a high Curie temperature (>980 °C) across various thicknesses. Moreover, the as-grown MgMoO crystals display remarkable stability under harsh environments. This work introduces nolanites-type crystal into ultrathin ferroelectrics. The scalable synthesis of stable ultrathin ferroelectric MgMoO expands the scope of ferroelectric materials and may prosper applications of ferroelectrics.

摘要

超薄、稳定的铁电材料的开发对于推进高密度、低功耗电子设备至关重要。然而,由于临界尺寸效应,超薄铁电材料很少见。在此,提出了一种新型铁电材料——氧化镁钼(MgMoO)。使用化学气相沉积(CVD)合成了高质量的超薄MgMoO晶体。超薄MgMoO具有宽带隙(约4.4 eV)和非线性光学响应。不同厚度的MgMoO晶体在室温下表现出平面外铁电特性,即使在2 nm厚度时仍保留铁电性。MgMoO表现出相对较大的剩余极化,范围为33至52 μC/cm²,可通过改变其厚度进行调节。值得注意的是,MgMoO在各种厚度下都具有较高的居里温度(>980°C)。此外,生长后的MgMoO晶体在恶劣环境下表现出显著的稳定性。这项工作将诺兰石型晶体引入超薄铁电体中。稳定超薄铁电体MgMoO的可扩展合成扩展了铁电材料的范围,并可能促进铁电体的应用。

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