Zhang Ziyu, Wu Binmin, Wang Yang, Cai Tianjun, Ma Mingze, You Chunyu, Liu Chang, Jiang Guobang, Hu Yuhang, Li Xing, Chen Xiang-Zhong, Song Enming, Cui Jizhai, Huang Gaoshan, Kiravittaya Suwit, Mei Yongfeng
Department of Materials Science & State Key Laboratory of Molecular Engineering of Polymer, Fudan University, Shanghai, 200438, People's Republic of China.
Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200438, People's Republic of China.
Nat Commun. 2024 Apr 9;15(1):3066. doi: 10.1038/s41467-024-47405-2.
Releasing pre-strained two-dimensional nanomembranes to assemble on-chip three-dimensional devices is crucial for upcoming advanced electronic and optoelectronic applications. However, the release process is affected by many unclear factors, hindering the transition from laboratory to industrial applications. Here, we propose a quasistatic multilevel finite element modeling to assemble three-dimensional structures from two-dimensional nanomembranes and offer verification results by various bilayer nanomembranes. Take Si/Cr nanomembrane as an example, we confirm that the three-dimensional structural formation is governed by both the minimum energy state and the geometric constraints imposed by the edges of the sacrificial layer. Large-scale, high-yield fabrication of three-dimensional structures is achieved, and two distinct three-dimensional structures are assembled from the same precursor. Six types of three-dimensional Si/Cr photodetectors are then prepared to resolve the incident angle of light with a deep neural network model, opening up possibilities for the design and manufacturing methods of More-than-Moore-era devices.
释放预应变二维纳米膜以组装片上三维器件对于即将到来的先进电子和光电子应用至关重要。然而,释放过程受到许多不明因素的影响,阻碍了从实验室到工业应用的转变。在此,我们提出一种准静态多级有限元模型,用于从二维纳米膜组装三维结构,并通过各种双层纳米膜提供验证结果。以Si/Cr纳米膜为例,我们证实三维结构的形成受最低能量状态和牺牲层边缘施加的几何约束共同支配。实现了三维结构的大规模、高产量制造,并且从相同的前驱体组装出两种不同的三维结构。然后制备了六种类型的三维Si/Cr光电探测器,以利用深度神经网络模型解析光的入射角,为超越摩尔时代器件的设计和制造方法开辟了可能性。