Zabelotsky Ty, Singh Sourabh, Haim Galya, Malkinson Rotem, Kadkhodazadeh Shima, Radko Ilya P, Aharonovich Igor, Steinberg Hadar, Berg-Sørensen Kirstine, Huck Alexander, Taniguchi Takashi, Watanabe Kenji, Bar-Gill Nir
The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel.
The Institute of Applied Physics, The Hebrew University of Jerusalem, Jerusalem 91904, Israel.
ACS Appl Nano Mater. 2023 Nov 28;6(23):21671-21678. doi: 10.1021/acsanm.3c03395. eCollection 2023 Dec 8.
Boron vacancies (VB) in hexagonal boron -nitride (hBN) have sparked great interest in recent years due to their optical and spin properties. Since hBN can be readily integrated into devices where it interfaces a huge variety of other 2D materials, boron vacancies may serve as a precise sensor which can be deployed at very close proximity to many important materials systems. Boron vacancy defects may be produced by a number of existing methods, the use of which may depend on the final application. Any method should reproducibly generate defects with controlled density and desired pattern. To date, however, detailed studies of such methods are missing. In this paper, we study various techniques for the preparation of hBN flakes from bulk crystals and relevant postprocessing treatments, namely, focused ion beam (FIB) implantation, for creation of VBs as a function of flake thickness and defect concentrations. We find that flake thickness plays an important role when optimizing implantation parameters, while careful sample cleaning proved important to achieve consistent results.
近年来，六方氮化硼（hBN）中的硼空位（VB）因其光学和自旋特性而引发了极大的关注。由于hBN能够很容易地集成到与多种其他二维材料相接触的器件中，硼空位可以作为一种精确的传感器，部署在非常接近许多重要材料系统的位置。硼空位缺陷可以通过多种现有方法产生，其使用可能取决于最终应用。任何方法都应该能够可重复地产生具有可控密度和所需图案的缺陷。然而，迄今为止，缺少对此类方法的详细研究。在本文中，我们研究了从块状晶体制备hBN薄片的各种技术以及相关的后处理方法，即聚焦离子束（FIB）注入，以研究作为薄片厚度和缺陷浓度函数的VBs的产生情况。我们发现，在优化注入参数时，薄片厚度起着重要作用，而仔细的样品清洗对于获得一致的结果被证明是很重要的。
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