Lee Da Won, Oh Seongkeun, Lee Dong Hyun David, Woo Ho Young, Ahn Junhyuk, Kim Seung Hyeon, Jung Byung Ku, Choi Yoonjoo, Kim Dagam, Yu Mi Yeon, Park Chun Gwon, Yun Hongseok, Kim Tae-Hyung, Han Myung Joon, Oh Soong Ju, Paik Taejong
Department of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea.
Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea.
Adv Sci (Weinh). 2024 Sep;11(33):e2403463. doi: 10.1002/advs.202403463. Epub 2024 Jul 4.
In this study, a novel synthesis of ultrathin, highly uniform colloidal bismuth sulfohalide (BiSX where X = Cl, Br, I) nanowires (NWs) and NW bundles (NBs) for room-temperature and solution-processed flexible photodetectors are presented. High-aspect-ratio bismuth sulfobromide (BiSBr) NWs are synthesized via a heat-up method using bismuth bromide and elemental S as precursors and 1-dodecanethiol as a solvent. Bundling of the BiSBr NWs occurs upon the addition of 1-octadecene as a co-solvent. The morphologies of the BiSBr NBs are easily tailored from sheaf-like structures to spherulite nanostructures by changing the solvent ratio. The optical bandgaps are modulated from 1.91 (BiSCl) and 1.88 eV (BiSBr) to 1.53 eV (BiSI) by changing the halide compositions. The optical bandgap of the ultrathin BiSBr NWs and NBs exhibits blueshift, whose origin is investigated through density functional theory-based first-principles calculations. Visible-light photodetectors are fabricated using BiSBr NWs and NBs via solution-based deposition followed by solid-state ligand exchanges. High photo-responsivities and external quantum efficiencies (EQE) are obtained for BiSBr NW and NB films even under strain, which offer a unique opportunity for the application of the novel BiSX NWs and NBs in flexible and environmentally friendly optoelectronic devices.
在本研究中,我们展示了一种用于室温及溶液处理的柔性光电探测器的超薄、高度均匀的卤硫化铋(BiSX,其中X = Cl、Br、I)纳米线(NWs)和纳米线束(NBs)的新型合成方法。通过使用溴化铋和元素硫作为前驱体,1-十二烷硫醇作为溶剂的加热法合成了高纵横比的溴硫化铋(BiSBr)纳米线。加入1-十八碳烯作为共溶剂时,BiSBr纳米线会发生束化。通过改变溶剂比例,BiSBr纳米线束的形态可以很容易地从束状结构调整为球晶纳米结构。通过改变卤化物组成,光学带隙从1.91(BiSCl)和1.88 eV(BiSBr)调制到1.53 eV(BiSI)。超薄BiSBr纳米线和纳米线束的光学带隙呈现蓝移,通过基于密度泛函理论的第一性原理计算研究了其起源。使用BiSBr纳米线和纳米线束通过基于溶液的沉积然后进行固态配体交换制备了可见光光电探测器。即使在应变条件下,BiSBr纳米线和纳米线束薄膜也能获得高光响应率和外量子效率(EQE),这为新型BiSX纳米线和纳米线束在柔性和环保光电器件中的应用提供了独特的机会。