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基于单层WSe同质结的半加器和解码器的逻辑计算场效应晶体管。

Logic Computing Field-Effect Transistors Based on a Monolayer WSe Homojunction for the Semi-adder and Decoder.

作者信息

Li Xueping, Wang Zhuojun, Tang Xiaojie, Yuan Peize, Li Lin, Shen Chenhai, Jiang Yurong, Song Xiaohui, Xia Congxin

机构信息

College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang, Henan 453007, China.

School of Physics, Henan Normal University, Xinxiang, Henan 453007, China.

出版信息

Nano Lett. 2024 Sep 4;24(35):11132-11139. doi: 10.1021/acs.nanolett.4c03556. Epub 2024 Aug 27.

Abstract

Two-dimensional reconfigurable field-effect transistors (FETs) are promising candidates for next-generation computing hardware. However, exploring the cascade design of FETs for logic computing remains challenging. Here, by using density functional theory combined with the nonequilibrium Green's function method, we design a 5 nm split-gate FET based on a monolayer WSe homojunction, which can implement dynamic polarity control in different gate configurations. The series array of two FETs shows a functional family of logic gates (NOR, AND, XOR, , and ), and the semi-adder designed by the logic functions AND and XOR reduces the number of transistors by 66.7%. The parallel array of two FETs demonstrates reconfigurable logic gates with NAND/OR// quadruple functions, which can realize the decoding function of 00-11 in the decoder. The cascade design of the electrically tunable FETs helps to tackle the logic device downscaling and integration dilemmas.

摘要

二维可重构场效应晶体管(FET)是下一代计算硬件的有前途的候选者。然而,探索用于逻辑计算的FET的级联设计仍然具有挑战性。在这里,通过使用密度泛函理论结合非平衡格林函数方法,我们设计了一种基于单层WSe同质结的5纳米分裂栅FET,它可以在不同的栅极配置中实现动态极性控制。两个FET的串联阵列展示了一个逻辑门功能族(或非门、与门、异或门等),并且由与门和异或门逻辑功能设计的半加器将晶体管数量减少了66.7%。两个FET的并联阵列展示了具有与非/或/等四重功能的可重构逻辑门,它可以在解码器中实现00 - 11的解码功能。电可调FET的级联设计有助于解决逻辑器件缩小尺寸和集成的困境。

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