Liao Hailiang, Savva Achilleas, Marsh Adam V, Yang Yu-Ying, Faber Hendrik, Rimmele Martina, Sanviti Matteo, Zhou Renqian, Emwas Abdul-Hamid, Martín Jaime, Anthopoulos Thomas D, Heeney Martin
King Abdullah University of Science and Technology (KAUST), Division of Physical Sciences & Engineering, 23955, Thuwal, Saudi Arabia.
Delft University of Technology, Fac. EEMCS, Mekelweg 4, 2628 CD, Delft, The Netherlands.
Angew Chem Int Ed Engl. 2025 Jan 21;64(4):e202416288. doi: 10.1002/anie.202416288. Epub 2024 Nov 2.
We present a series of newly developed donor-acceptor (D-A) polymers designed specifically for organic electrochemical transistors (OECTs) synthesized by a straightforward route. All polymers exhibited accumulation mode behavior in OECT devices, and tuning of the donor comonomer resulted in a three-order-of-magnitude increase in transconductance. The best polymer gFBT-g2T, exhibited normalized peak transconductance (g) of 298±10.4 S cm with a corresponding product of charge-carrier mobility and volumetric capacitance, μC*, of 847 F V cm s and a μ of 5.76 cm V s, amongst the highest reported to date. Furthermore, gFBT-g2T exhibited exceptional temperature stability, maintaining the outstanding electrochemical performance even after undergoing a standard (autoclave) high pressure steam sterilization procedure. Steam treatment was also found to promote film porosity, with the formation of circular 200-400 nm voids. These results demonstrate the potential of gFBT-g2T in p-type accumulation mode OECTs, and pave the way for the use in implantable bioelectronics for medical applications.
我们展示了一系列新开发的供体-受体(D-A)聚合物,这些聚合物是专门为通过直接路线合成的有机电化学晶体管(OECT)设计的。所有聚合物在OECT器件中均表现出积累模式行为,并且对供体共聚单体的调节导致跨导提高了三个数量级。最佳聚合物gFBT-g2T的归一化峰值跨导(g)为298±10.4 S cm,相应的电荷载流子迁移率与体积电容的乘积μC*为847 F V cm s,μ为5.76 cm V s,是迄今为止报道的最高值之一。此外,gFBT-g2T表现出出色的温度稳定性,即使经过标准(高压釜)高压蒸汽灭菌程序后仍保持出色的电化学性能。还发现蒸汽处理可促进膜的孔隙率,形成200-400 nm的圆形空隙。这些结果证明了gFBT-g2T在p型积累模式OECT中的潜力,并为其在医疗应用的可植入生物电子学中的应用铺平了道路。